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Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting. / Shklyaev, A. A.

In: Journal of Physics: Conference Series, Vol. 1461, No. 1, 012160, 23.04.2020.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Shklyaev, AA 2020, 'Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting', Journal of Physics: Conference Series, vol. 1461, no. 1, 012160. https://doi.org/10.1088/1742-6596/1461/1/012160

APA

Shklyaev, A. A. (2020). Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting. Journal of Physics: Conference Series, 1461(1), [012160]. https://doi.org/10.1088/1742-6596/1461/1/012160

Vancouver

Shklyaev AA. Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting. Journal of Physics: Conference Series. 2020 Apr 23;1461(1):012160. doi: 10.1088/1742-6596/1461/1/012160

Author

Shklyaev, A. A. / Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting. In: Journal of Physics: Conference Series. 2020 ; Vol. 1461, No. 1.

BibTeX

@article{267da3fb65c64a2fabaad321eb1872b5,
title = "Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting",
abstract = "The arrays formation of submicron- and micron-sized SiGe and Ge dielectric particles on the Si and SiO2 surfaces, which occur due to solid-state dewetting, is investigated. The shape of the particles and their spatial distribution turned out to be strongly dependent on the crystallographic Si surface orientation, the amount of deposited Ge and the Ge deposition rate, as well as on the presence of a SiO2 film on the Si surface. Possible applications of various surface morphologies with metasurface properties are discussed.",
keywords = "DEPOSITION",
author = "Shklyaev, {A. A.}",
year = "2020",
month = apr,
day = "23",
doi = "10.1088/1742-6596/1461/1/012160",
language = "English",
volume = "1461",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 ; Conference date: 15-07-2019 Through 19-07-2019",

}

RIS

TY - JOUR

T1 - Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting

AU - Shklyaev, A. A.

PY - 2020/4/23

Y1 - 2020/4/23

N2 - The arrays formation of submicron- and micron-sized SiGe and Ge dielectric particles on the Si and SiO2 surfaces, which occur due to solid-state dewetting, is investigated. The shape of the particles and their spatial distribution turned out to be strongly dependent on the crystallographic Si surface orientation, the amount of deposited Ge and the Ge deposition rate, as well as on the presence of a SiO2 film on the Si surface. Possible applications of various surface morphologies with metasurface properties are discussed.

AB - The arrays formation of submicron- and micron-sized SiGe and Ge dielectric particles on the Si and SiO2 surfaces, which occur due to solid-state dewetting, is investigated. The shape of the particles and their spatial distribution turned out to be strongly dependent on the crystallographic Si surface orientation, the amount of deposited Ge and the Ge deposition rate, as well as on the presence of a SiO2 film on the Si surface. Possible applications of various surface morphologies with metasurface properties are discussed.

KW - DEPOSITION

UR - http://www.scopus.com/inward/record.url?scp=85084134324&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1461/1/012160

DO - 10.1088/1742-6596/1461/1/012160

M3 - Conference article

AN - SCOPUS:85084134324

VL - 1461

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012160

T2 - 4th International Conference on Metamaterials and Nanophotonics, METANANO 2019

Y2 - 15 July 2019 through 19 July 2019

ER -

ID: 24229918