Standard

Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots. / Nebogatikova, Nadezhda A.; Antonova, Irina V.; Ivanov, Artem I. et al.

In: Nanotechnology, Vol. 31, No. 29, 295602, 01.05.2020.

Research output: Contribution to journalArticlepeer-review

Harvard

Nebogatikova, NA, Antonova, IV, Ivanov, AI, Demin, VA, Kvashnin, DG, Olejniczak, A, Gutakovskii, AK, Kornieieva, KA, Renault, PLJ, Skuratov, VA & Chernozatonskii, LA 2020, 'Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots', Nanotechnology, vol. 31, no. 29, 295602. https://doi.org/10.1088/1361-6528/ab83b8

APA

Nebogatikova, N. A., Antonova, I. V., Ivanov, A. I., Demin, V. A., Kvashnin, D. G., Olejniczak, A., Gutakovskii, A. K., Kornieieva, K. A., Renault, P. L. J., Skuratov, V. A., & Chernozatonskii, L. A. (2020). Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots. Nanotechnology, 31(29), [295602]. https://doi.org/10.1088/1361-6528/ab83b8

Vancouver

Nebogatikova NA, Antonova IV, Ivanov AI, Demin VA, Kvashnin DG, Olejniczak A et al. Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots. Nanotechnology. 2020 May 1;31(29):295602. doi: 10.1088/1361-6528/ab83b8

Author

Nebogatikova, Nadezhda A. ; Antonova, Irina V. ; Ivanov, Artem I. et al. / Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots. In: Nanotechnology. 2020 ; Vol. 31, No. 29.

BibTeX

@article{fb0a95b0cc264fe4b798e5eaa058b481,
title = "Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots",
abstract = "A new approach to creating a new and locally nanostructured graphene-based material is reported. We studied the electric and structural properties of partially fluorinated graphene (FG) films obtained from an FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main force driving the changes. It was found that ion irradiation leads to the formation of locally thermally expanded FG and its cracking into nanoparticles with small (∼1.5-3 nm) graphene quantum dots (GQD), embedded in them. The bandgap of GQD was estimated as 1 -1.5 eV. A further developed approach was applied to correct the functional properties of printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.",
keywords = "nanostructuring, graphene quantum dots, fluorinated graphene, swift ion irradiation, molecular dynamics simulation, memristor, HEAVY-ION IRRADIATION, THERMAL-CONDUCTIVITY, CARBON, FILMS, DYNAMICS, fluorinated grapheme",
author = "Nebogatikova, {Nadezhda A.} and Antonova, {Irina V.} and Ivanov, {Artem I.} and Demin, {Victor A.} and Kvashnin, {Dmitry G.} and Andrzej Olejniczak and Gutakovskii, {Anton K.} and Kornieieva, {Kateryna A.} and Renault, {Paul L.J.} and Skuratov, {Vladimir A.} and Chernozatonskii, {Leonid A.}",
note = "Publisher Copyright: {\textcopyright} 2020 IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = may,
day = "1",
doi = "10.1088/1361-6528/ab83b8",
language = "English",
volume = "31",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "29",

}

RIS

TY - JOUR

T1 - Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots

AU - Nebogatikova, Nadezhda A.

AU - Antonova, Irina V.

AU - Ivanov, Artem I.

AU - Demin, Victor A.

AU - Kvashnin, Dmitry G.

AU - Olejniczak, Andrzej

AU - Gutakovskii, Anton K.

AU - Kornieieva, Kateryna A.

AU - Renault, Paul L.J.

AU - Skuratov, Vladimir A.

AU - Chernozatonskii, Leonid A.

N1 - Publisher Copyright: © 2020 IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/5/1

Y1 - 2020/5/1

N2 - A new approach to creating a new and locally nanostructured graphene-based material is reported. We studied the electric and structural properties of partially fluorinated graphene (FG) films obtained from an FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main force driving the changes. It was found that ion irradiation leads to the formation of locally thermally expanded FG and its cracking into nanoparticles with small (∼1.5-3 nm) graphene quantum dots (GQD), embedded in them. The bandgap of GQD was estimated as 1 -1.5 eV. A further developed approach was applied to correct the functional properties of printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.

AB - A new approach to creating a new and locally nanostructured graphene-based material is reported. We studied the electric and structural properties of partially fluorinated graphene (FG) films obtained from an FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main force driving the changes. It was found that ion irradiation leads to the formation of locally thermally expanded FG and its cracking into nanoparticles with small (∼1.5-3 nm) graphene quantum dots (GQD), embedded in them. The bandgap of GQD was estimated as 1 -1.5 eV. A further developed approach was applied to correct the functional properties of printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.

KW - nanostructuring

KW - graphene quantum dots

KW - fluorinated graphene

KW - swift ion irradiation

KW - molecular dynamics simulation

KW - memristor

KW - HEAVY-ION IRRADIATION

KW - THERMAL-CONDUCTIVITY

KW - CARBON

KW - FILMS

KW - DYNAMICS

KW - fluorinated grapheme

UR - http://www.scopus.com/inward/record.url?scp=85084693477&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ab83b8

DO - 10.1088/1361-6528/ab83b8

M3 - Article

C2 - 32213679

AN - SCOPUS:85084693477

VL - 31

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 29

M1 - 295602

ER -

ID: 24301796