TY - JOUR

T1 - EPR study of Si- and Ge-related defects in HPHT diamonds synthesized from Mg-based solvent-catalysts

AU - Nadolinny, Vladimir

AU - Komarovskikh, Andrey

AU - Palyanov, Yuri

AU - Kupriyanov, Igor

AU - Borzdov, Yuri

AU - Rakhmanova, Mariana

AU - Yuryeva, Olga

AU - Veber, Sergey

PY - 2016/10/1

Y1 - 2016/10/1

N2 - In this work, high pressure high temperature (HPHT) diamonds synthesized in the Mg–C system with germanium, silicon and boron additives were studied. In the photoluminescence spectra of the samples doped with Ge, an intense system 602 nm attributed to germanium-vacancy defects was detected. In the electron paramagnetic resonance (EPR) spectra of these samples, a new paramagnetic center with S = 1 was detected along with substitutional nitrogen P1 and silicon-vacancy KUL1 (SiV0) centers. The angular dependence investigation of the new spectrum allowed us to establish its spin Hamiltonian parameters: g|| = 2.0025, g⊥ = 2.0027, D = 80.3 mT, E = 0. The center was determined to have the symmetry axis parallel to 〈111〉. Hyperfine structure (HFS) of one 73Ge atom (I = 9/2) was observed for the new spectrum. The novel paramagnetic center was proposed to be the neutral germanium split-vacancy defect. EPR and luminescence studies of diamonds doped with Si and B revealed a new paramagnetic center that can be associated with the sharp luminescence system 720 nm. An analysis of the angular dependence of the EPR spectrum showed that it had electronic spin S = 1/2 and anisotropic g-factor: g1 = 2.0033, g2 = 2.0004, and g3 = 2.0024. Based on the principal values and directions of the g-tensor the detected center was suggested to have the structure of silicon and boron atoms in the nearest carbon positions.

AB - In this work, high pressure high temperature (HPHT) diamonds synthesized in the Mg–C system with germanium, silicon and boron additives were studied. In the photoluminescence spectra of the samples doped with Ge, an intense system 602 nm attributed to germanium-vacancy defects was detected. In the electron paramagnetic resonance (EPR) spectra of these samples, a new paramagnetic center with S = 1 was detected along with substitutional nitrogen P1 and silicon-vacancy KUL1 (SiV0) centers. The angular dependence investigation of the new spectrum allowed us to establish its spin Hamiltonian parameters: g|| = 2.0025, g⊥ = 2.0027, D = 80.3 mT, E = 0. The center was determined to have the symmetry axis parallel to 〈111〉. Hyperfine structure (HFS) of one 73Ge atom (I = 9/2) was observed for the new spectrum. The novel paramagnetic center was proposed to be the neutral germanium split-vacancy defect. EPR and luminescence studies of diamonds doped with Si and B revealed a new paramagnetic center that can be associated with the sharp luminescence system 720 nm. An analysis of the angular dependence of the EPR spectrum showed that it had electronic spin S = 1/2 and anisotropic g-factor: g1 = 2.0033, g2 = 2.0004, and g3 = 2.0024. Based on the principal values and directions of the g-tensor the detected center was suggested to have the structure of silicon and boron atoms in the nearest carbon positions.

KW - defects

KW - electron paramagnetic resonance

KW - germanium

KW - silicon

KW - synthetic diamond

UR - http://www.scopus.com/inward/record.url?scp=84991249593&partnerID=8YFLogxK

U2 - 10.1002/pssa.201600211

DO - 10.1002/pssa.201600211

M3 - Article

AN - SCOPUS:84991249593

VL - 213

SP - 2623

EP - 2628

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 10

ER -