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Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. / Mihalyuk, Alexey N; Bondarenko, Leonid V; Tupchaya, Alexandra Y et al.

In: Nanoscale, Vol. 16, No. 3, 18.01.2024, p. 1272-1281.

Research output: Contribution to journalArticlepeer-review

Harvard

Mihalyuk, AN, Bondarenko, LV, Tupchaya, AY, Gruznev, DV, Solovova, NY, Golyashov, VA, Tereshchenko, OE, Okuda, T, Kimura, A, Eremeev, SV, Zotov, AV & Saranin, AA 2024, 'Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications', Nanoscale, vol. 16, no. 3, pp. 1272-1281. https://doi.org/10.1039/d3nr03830k

APA

Mihalyuk, A. N., Bondarenko, L. V., Tupchaya, A. Y., Gruznev, D. V., Solovova, N. Y., Golyashov, V. A., Tereshchenko, O. E., Okuda, T., Kimura, A., Eremeev, S. V., Zotov, A. V., & Saranin, A. A. (2024). Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. Nanoscale, 16(3), 1272-1281. https://doi.org/10.1039/d3nr03830k

Vancouver

Mihalyuk AN, Bondarenko LV, Tupchaya AY, Gruznev DV, Solovova NY, Golyashov VA et al. Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. Nanoscale. 2024 Jan 18;16(3):1272-1281. Epub 2023 Dec 21. doi: 10.1039/d3nr03830k

Author

Mihalyuk, Alexey N ; Bondarenko, Leonid V ; Tupchaya, Alexandra Y et al. / Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. In: Nanoscale. 2024 ; Vol. 16, No. 3. pp. 1272-1281.

BibTeX

@article{22c2f3a0416a499d845132c2a8f8216e,
title = "Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications",
abstract = "The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.",
author = "Mihalyuk, {Alexey N} and Bondarenko, {Leonid V} and Tupchaya, {Alexandra Y} and Gruznev, {Dimitry V} and Solovova, {Nadezhda Yu} and Golyashov, {Vladimir A} and Tereshchenko, {Oleg E} and Taichi Okuda and Akio Kimura and Eremeev, {Sergey V} and Zotov, {Andrey V} and Saranin, {Alexander A}",
note = "The growth and measurements on samples A and B were supported by the RSF Grant No. 22-12-00174 and 22-12-20024, respectively. The calculations for the 2√3 × 3 Bi phase were supported by the RSF Grant No. 22-12-00174. Calculations for the Bi bilayer phase were supported by the Government research assignment for ISPMS SB RAS, project FWRW-2022-0001. Calculations were carried out using the equipment from the Shared Resource Center “Far Eastern Computing Resource” IACP FEB RAS ( https://cc.dvo.ru ). XPS and a part of the ARPES studies were carried out using equipment from the Shared Resource Center {\textquoteleft}Nanostructures{\textquoteright} at ISP SB RAS.",
year = "2024",
month = jan,
day = "18",
doi = "10.1039/d3nr03830k",
language = "English",
volume = "16",
pages = "1272--1281",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "3",

}

RIS

TY - JOUR

T1 - Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

AU - Mihalyuk, Alexey N

AU - Bondarenko, Leonid V

AU - Tupchaya, Alexandra Y

AU - Gruznev, Dimitry V

AU - Solovova, Nadezhda Yu

AU - Golyashov, Vladimir A

AU - Tereshchenko, Oleg E

AU - Okuda, Taichi

AU - Kimura, Akio

AU - Eremeev, Sergey V

AU - Zotov, Andrey V

AU - Saranin, Alexander A

N1 - The growth and measurements on samples A and B were supported by the RSF Grant No. 22-12-00174 and 22-12-20024, respectively. The calculations for the 2√3 × 3 Bi phase were supported by the RSF Grant No. 22-12-00174. Calculations for the Bi bilayer phase were supported by the Government research assignment for ISPMS SB RAS, project FWRW-2022-0001. Calculations were carried out using the equipment from the Shared Resource Center “Far Eastern Computing Resource” IACP FEB RAS ( https://cc.dvo.ru ). XPS and a part of the ARPES studies were carried out using equipment from the Shared Resource Center ‘Nanostructures’ at ISP SB RAS.

PY - 2024/1/18

Y1 - 2024/1/18

N2 - The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.

AB - The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85180592618&origin=inward&txGid=9d6970b0231955973a0e3a72da358d7f

UR - https://www.mendeley.com/catalogue/31e1a3f4-abd0-3bd4-8b83-9426a0511a8f/

U2 - 10.1039/d3nr03830k

DO - 10.1039/d3nr03830k

M3 - Article

C2 - 38126765

VL - 16

SP - 1272

EP - 1281

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 3

ER -

ID: 59377506