TY - JOUR

T1 - Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

AU - Mihalyuk, Alexey N

AU - Bondarenko, Leonid V

AU - Tupchaya, Alexandra Y

AU - Gruznev, Dimitry V

AU - Solovova, Nadezhda Yu

AU - Golyashov, Vladimir A

AU - Tereshchenko, Oleg E

AU - Okuda, Taichi

AU - Kimura, Akio

AU - Eremeev, Sergey V

AU - Zotov, Andrey V

AU - Saranin, Alexander A

N1 - The growth and measurements on samples A and B were supported by the RSF Grant No. 22-12-00174 and 22-12-20024, respectively. The calculations for the 2√3 × 3 Bi phase were supported by the RSF Grant No. 22-12-00174. Calculations for the Bi bilayer phase were supported by the Government research assignment for ISPMS SB RAS, project FWRW-2022-0001. Calculations were carried out using the equipment from the Shared Resource Center “Far Eastern Computing Resource” IACP FEB RAS ( https://cc.dvo.ru ). XPS and a part of the ARPES studies were carried out using equipment from the Shared Resource Center ‘Nanostructures’ at ISP SB RAS.

PY - 2024/1/18

Y1 - 2024/1/18

N2 - The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.

AB - The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85180592618&origin=inward&txGid=9d6970b0231955973a0e3a72da358d7f

UR - https://www.mendeley.com/catalogue/31e1a3f4-abd0-3bd4-8b83-9426a0511a8f/

U2 - 10.1039/d3nr03830k

DO - 10.1039/d3nr03830k

M3 - Article

C2 - 38126765

VL - 16

SP - 1272

EP - 1281

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 3

ER -