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Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride. / Marin, D. V.; Shvets, V. A.; Azarov, I. A. et al.

In: Infrared Physics and Technology, Vol. 116, 103793, 08.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Marin, DV, Shvets, VA, Azarov, IA, Yakushev, MV & Rykhlitskii, SV 2021, 'Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride', Infrared Physics and Technology, vol. 116, 103793. https://doi.org/10.1016/j.infrared.2021.103793

APA

Marin, D. V., Shvets, V. A., Azarov, I. A., Yakushev, M. V., & Rykhlitskii, S. V. (2021). Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride. Infrared Physics and Technology, 116, [103793]. https://doi.org/10.1016/j.infrared.2021.103793

Vancouver

Marin DV, Shvets VA, Azarov IA, Yakushev MV, Rykhlitskii SV. Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride. Infrared Physics and Technology. 2021 Aug;116:103793. doi: 10.1016/j.infrared.2021.103793

Author

Marin, D. V. ; Shvets, V. A. ; Azarov, I. A. et al. / Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride. In: Infrared Physics and Technology. 2021 ; Vol. 116.

BibTeX

@article{c728620136ed454e9244cc99142b4b5f,
title = "Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride",
abstract = "Low temperature in situ control in the technology of HgCdTe layers growing by MBE is a key requirement for obtaining structures of high quality. Spectroscopic ellipsometry seems to be one of the suitable technique for solving this problem. The present paper proposes ellipsometric methods for determining the temperature in the process of pre-epitaxial heat treatment of the samples. The proposed methods are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer. The first method uses the temperature shift of the absorption edge, which is determined from the onset of interference oscillations. It turned out to be resistant to experimental errors and its accuracy proved to be 3–5 °C. The second method is based on comparing the measured and reference spectra. It is much more sensitive to the temperature, but depends strongly on the accuracy of ellipsometric measurements. The combined use of both methods ensures a temperature sensitivity of the order of 1 °C and an accuracy of 3–5 °C.",
keywords = "CdHgTe (CMT), CdTe (CT), Molecular-Beam Epitaxy (MBE), Spectral ellipsometry, Thermometry",
author = "Marin, {D. V.} and Shvets, {V. A.} and Azarov, {I. A.} and Yakushev, {M. V.} and Rykhlitskii, {S. V.}",
note = "Funding Information: This work was supported by a gran t from the Ministry of Science and Higher Education No. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = aug,
doi = "10.1016/j.infrared.2021.103793",
language = "English",
volume = "116",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride

AU - Marin, D. V.

AU - Shvets, V. A.

AU - Azarov, I. A.

AU - Yakushev, M. V.

AU - Rykhlitskii, S. V.

N1 - Funding Information: This work was supported by a gran t from the Ministry of Science and Higher Education No. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/8

Y1 - 2021/8

N2 - Low temperature in situ control in the technology of HgCdTe layers growing by MBE is a key requirement for obtaining structures of high quality. Spectroscopic ellipsometry seems to be one of the suitable technique for solving this problem. The present paper proposes ellipsometric methods for determining the temperature in the process of pre-epitaxial heat treatment of the samples. The proposed methods are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer. The first method uses the temperature shift of the absorption edge, which is determined from the onset of interference oscillations. It turned out to be resistant to experimental errors and its accuracy proved to be 3–5 °C. The second method is based on comparing the measured and reference spectra. It is much more sensitive to the temperature, but depends strongly on the accuracy of ellipsometric measurements. The combined use of both methods ensures a temperature sensitivity of the order of 1 °C and an accuracy of 3–5 °C.

AB - Low temperature in situ control in the technology of HgCdTe layers growing by MBE is a key requirement for obtaining structures of high quality. Spectroscopic ellipsometry seems to be one of the suitable technique for solving this problem. The present paper proposes ellipsometric methods for determining the temperature in the process of pre-epitaxial heat treatment of the samples. The proposed methods are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer. The first method uses the temperature shift of the absorption edge, which is determined from the onset of interference oscillations. It turned out to be resistant to experimental errors and its accuracy proved to be 3–5 °C. The second method is based on comparing the measured and reference spectra. It is much more sensitive to the temperature, but depends strongly on the accuracy of ellipsometric measurements. The combined use of both methods ensures a temperature sensitivity of the order of 1 °C and an accuracy of 3–5 °C.

KW - CdHgTe (CMT)

KW - CdTe (CT)

KW - Molecular-Beam Epitaxy (MBE)

KW - Spectral ellipsometry

KW - Thermometry

UR - http://www.scopus.com/inward/record.url?scp=85107669002&partnerID=8YFLogxK

U2 - 10.1016/j.infrared.2021.103793

DO - 10.1016/j.infrared.2021.103793

M3 - Article

AN - SCOPUS:85107669002

VL - 116

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

M1 - 103793

ER -

ID: 29176043