Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

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Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures. / Zinovieva, A. F.; Zinovyev, V. A.; Nenashev, A. V. et al.

In: Physical Review B, Vol. 99, No. 11, 115314, 22.03.2019.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{a13b670f36d447a887dbc13139cc8827,

title = "Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures",

abstract = "A new type of quantum dot (QD) structure that enables us to control a spatial localization of electrons by changing the strain distribution in the vicinity of QDs is proposed. The structures represent a combination of large (∼200nm) GeSi disklike quantum dots (nanodisks) and groups of smaller (∼30nm) laterally ordered QDs grown over a nanodisk template. Electron localization has been studied by the electron spin resonance (ESR) method. Analysis of experimental results has been supported by calculations of electron binding energies and carrier distribution probabilities taking into account strain effects and real geometry of nano-objects. Results show that the strain field produced by the nanodisk can be used for tuning the energy levels of electrons in different Δ valleys and makes possible successful realization of simultaneous localization of two electrons with different g factors in the vicinity of the same QD.",

keywords = "SPIN-RESONANCE EXPERIMENTS, ISLANDS, SI, PHOTOLUMINESCENCE, SILICON, DONORS",

author = "Zinovieva, {A. F.} and Zinovyev, {V. A.} and Nenashev, {A. V.} and Kulik, {L. V.} and Dvurechenskii, {A. V.}",

year = "2019",

month = mar,

day = "22",

doi = "10.1103/PhysRevB.99.115314",

language = "English",

volume = "99",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "11",

}

RIS

TY - JOUR

T1 - Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

AU - Zinovieva, A. F.

AU - Zinovyev, V. A.

AU - Nenashev, A. V.

AU - Kulik, L. V.

AU - Dvurechenskii, A. V.

PY - 2019/3/22

Y1 - 2019/3/22

N2 - A new type of quantum dot (QD) structure that enables us to control a spatial localization of electrons by changing the strain distribution in the vicinity of QDs is proposed. The structures represent a combination of large (∼200nm) GeSi disklike quantum dots (nanodisks) and groups of smaller (∼30nm) laterally ordered QDs grown over a nanodisk template. Electron localization has been studied by the electron spin resonance (ESR) method. Analysis of experimental results has been supported by calculations of electron binding energies and carrier distribution probabilities taking into account strain effects and real geometry of nano-objects. Results show that the strain field produced by the nanodisk can be used for tuning the energy levels of electrons in different Δ valleys and makes possible successful realization of simultaneous localization of two electrons with different g factors in the vicinity of the same QD.

AB - A new type of quantum dot (QD) structure that enables us to control a spatial localization of electrons by changing the strain distribution in the vicinity of QDs is proposed. The structures represent a combination of large (∼200nm) GeSi disklike quantum dots (nanodisks) and groups of smaller (∼30nm) laterally ordered QDs grown over a nanodisk template. Electron localization has been studied by the electron spin resonance (ESR) method. Analysis of experimental results has been supported by calculations of electron binding energies and carrier distribution probabilities taking into account strain effects and real geometry of nano-objects. Results show that the strain field produced by the nanodisk can be used for tuning the energy levels of electrons in different Δ valleys and makes possible successful realization of simultaneous localization of two electrons with different g factors in the vicinity of the same QD.

KW - SPIN-RESONANCE EXPERIMENTS

KW - ISLANDS

KW - SI

KW - PHOTOLUMINESCENCE

KW - SILICON

KW - DONORS

UR - http://www.scopus.com/inward/record.url?scp=85064128820&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.99.115314

DO - 10.1103/PhysRevB.99.115314

M3 - Article

AN - SCOPUS:85064128820

VL - 99

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 11

M1 - 115314

ER -

ID: 19358284