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Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation. / Sitnikov, S. V.; Rodyakina, E. E.; Latyshev, A. V.

In: Semiconductors, Vol. 53, No. 6, 01.06.2019, p. 795-799.

Research output: Contribution to journal › Article › peer-review

Harvard

Sitnikov, SV, Rodyakina, EE & Latyshev, AV 2019, 'Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation', Semiconductors, vol. 53, no. 6, pp. 795-799. https://doi.org/10.1134/S106378261906023X

APA

Sitnikov, S. V., Rodyakina, E. E., & Latyshev, A. V. (2019). Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation. Semiconductors, 53(6), 795-799. https://doi.org/10.1134/S106378261906023X

Vancouver

Sitnikov SV, Rodyakina EE, Latyshev AV. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation. Semiconductors. 2019 Jun 1;53(6):795-799. doi: 10.1134/S106378261906023X

Author

Sitnikov, S. V. ; Rodyakina, E. E. ; Latyshev, A. V. / Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation. In: Semiconductors. 2019 ; Vol. 53, No. 6. pp. 795-799.

BibTeX

@article{157381259ac8495c9937f179fb8cd65c,
title = "Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation",
abstract = "Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.",
keywords = "ATOMIC STEPS, SI(001), DIFFUSION, SI",
author = "Sitnikov, {S. V.} and Rodyakina, {E. E.} and Latyshev, {A. V.}",
year = "2019",
month = jun,
day = "1",
doi = "10.1134/S106378261906023X",
language = "English",
volume = "53",
pages = "795--799",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

AU - Sitnikov, S. V.

AU - Rodyakina, E. E.

AU - Latyshev, A. V.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

AB - Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

KW - ATOMIC STEPS

KW - SI(001)

KW - DIFFUSION

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85067187521&partnerID=8YFLogxK

U2 - 10.1134/S106378261906023X

DO - 10.1134/S106378261906023X

M3 - Article

AN - SCOPUS:85067187521

VL - 53

SP - 795

EP - 799

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 20589172