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Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene. / Antonova, I. V.; Nebogatikova, N. A.; Kokh, K. A. et al.

In: Nanotechnology, Vol. 31, No. 12, 125602, 07.01.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Antonova, IV, Nebogatikova, NA, Kokh, KA, Kustov, DA, Soots, RA, Golyashov, VA & Tereshchenko, OE 2020, 'Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene', Nanotechnology, vol. 31, no. 12, 125602. https://doi.org/10.1088/1361-6528/ab5cd5

APA

Antonova, I. V., Nebogatikova, N. A., Kokh, K. A., Kustov, D. A., Soots, R. A., Golyashov, V. A., & Tereshchenko, O. E. (2020). Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene. Nanotechnology, 31(12), [125602]. https://doi.org/10.1088/1361-6528/ab5cd5

Vancouver

Antonova IV, Nebogatikova NA, Kokh KA, Kustov DA, Soots RA, Golyashov VA et al. Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene. Nanotechnology. 2020 Jan 7;31(12):125602. doi: 10.1088/1361-6528/ab5cd5

Author

Antonova, I. V. ; Nebogatikova, N. A. ; Kokh, K. A. et al. / Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene. In: Nanotechnology. 2020 ; Vol. 31, No. 12.

BibTeX

@article{4b111c4c7df741ee82ebc8814e7495c4,
title = "Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene",
abstract = "Thin Bi2Se3 flakes with few nanometer thicknesses and sized up to 350 μm were created by using electrochemical splitting from high-quality Bi2Se3 bulk monocrystals. The dependence of film resistance on the Bi2Se3 flake thickness demonstrates that, at room temperature, the bulk conductivity becomes negligible in comparison with the surface conductivity for films with thicknesses lower than 80 nm. Unexpectedly, all these films demonstrated p-type conductivity. The doping effect with sulfur or sulfur-related radicals during electrochemical exfoliation is suggested for the p-type conductivity of the exfoliated Bi2Se3 films. The formation of 2-8 nm films was predominantly found. Van der Waals (vdW) heterostructures of Bi2Se3/Graphene/SiO2/Si were created and their properties were compared with that of Bi2Se3 on the SiO2/Si substrate. The increase of the conductivity and carrier mobility in Bi2Se3 flakes of 3-5 times was found for vdW heterostructures with graphene. Thin Bi2Se3 films are potentially interesting for applications for spintronics, nano- and optoelectronics.",
keywords = "bismuth selenide, electrochemical exfoliation, van der Waals heterostructures, electrical properties, carrier mobility, TOPOLOGICAL INSULATOR BI2SE3, ELECTRICAL-TRANSPORT PROPERTIES, QUANTUM OSCILLATIONS, SURFACE, CONDUCTION",
author = "Antonova, {I. V.} and Nebogatikova, {N. A.} and Kokh, {K. A.} and Kustov, {D. A.} and Soots, {R. A.} and Golyashov, {V. A.} and Tereshchenko, {O. E.}",
note = "Publisher Copyright: {\textcopyright} 2020 IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = jan,
day = "7",
doi = "10.1088/1361-6528/ab5cd5",
language = "English",
volume = "31",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "12",

}

RIS

TY - JOUR

T1 - Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene

AU - Antonova, I. V.

AU - Nebogatikova, N. A.

AU - Kokh, K. A.

AU - Kustov, D. A.

AU - Soots, R. A.

AU - Golyashov, V. A.

AU - Tereshchenko, O. E.

N1 - Publisher Copyright: © 2020 IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/1/7

Y1 - 2020/1/7

N2 - Thin Bi2Se3 flakes with few nanometer thicknesses and sized up to 350 μm were created by using electrochemical splitting from high-quality Bi2Se3 bulk monocrystals. The dependence of film resistance on the Bi2Se3 flake thickness demonstrates that, at room temperature, the bulk conductivity becomes negligible in comparison with the surface conductivity for films with thicknesses lower than 80 nm. Unexpectedly, all these films demonstrated p-type conductivity. The doping effect with sulfur or sulfur-related radicals during electrochemical exfoliation is suggested for the p-type conductivity of the exfoliated Bi2Se3 films. The formation of 2-8 nm films was predominantly found. Van der Waals (vdW) heterostructures of Bi2Se3/Graphene/SiO2/Si were created and their properties were compared with that of Bi2Se3 on the SiO2/Si substrate. The increase of the conductivity and carrier mobility in Bi2Se3 flakes of 3-5 times was found for vdW heterostructures with graphene. Thin Bi2Se3 films are potentially interesting for applications for spintronics, nano- and optoelectronics.

AB - Thin Bi2Se3 flakes with few nanometer thicknesses and sized up to 350 μm were created by using electrochemical splitting from high-quality Bi2Se3 bulk monocrystals. The dependence of film resistance on the Bi2Se3 flake thickness demonstrates that, at room temperature, the bulk conductivity becomes negligible in comparison with the surface conductivity for films with thicknesses lower than 80 nm. Unexpectedly, all these films demonstrated p-type conductivity. The doping effect with sulfur or sulfur-related radicals during electrochemical exfoliation is suggested for the p-type conductivity of the exfoliated Bi2Se3 films. The formation of 2-8 nm films was predominantly found. Van der Waals (vdW) heterostructures of Bi2Se3/Graphene/SiO2/Si were created and their properties were compared with that of Bi2Se3 on the SiO2/Si substrate. The increase of the conductivity and carrier mobility in Bi2Se3 flakes of 3-5 times was found for vdW heterostructures with graphene. Thin Bi2Se3 films are potentially interesting for applications for spintronics, nano- and optoelectronics.

KW - bismuth selenide

KW - electrochemical exfoliation

KW - van der Waals heterostructures

KW - electrical properties

KW - carrier mobility

KW - TOPOLOGICAL INSULATOR BI2SE3

KW - ELECTRICAL-TRANSPORT PROPERTIES

KW - QUANTUM OSCILLATIONS

KW - SURFACE

KW - CONDUCTION

UR - http://www.scopus.com/inward/record.url?scp=85077761170&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ab5cd5

DO - 10.1088/1361-6528/ab5cd5

M3 - Article

C2 - 31778984

AN - SCOPUS:85077761170

VL - 31

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 12

M1 - 125602

ER -

ID: 23102550