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Effect of the graphite oxide composition on the structure of products obtained by sulfuric acid treatment at elevated temperatures. / Stolyarova, S. G.; Kobeleva, E. S.; Asanov, I. P. et al.

In: Journal of Structural Chemistry, Vol. 58, No. 6, 01.11.2017, p. 1180-1186.

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Stolyarova SG, Kobeleva ES, Asanov IP, Okotrub AV, Bulusheva LG. Effect of the graphite oxide composition on the structure of products obtained by sulfuric acid treatment at elevated temperatures. Journal of Structural Chemistry. 2017 Nov 1;58(6):1180-1186. doi: 10.1134/S0022476617060166

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Stolyarova, S. G. ; Kobeleva, E. S. ; Asanov, I. P. et al. / Effect of the graphite oxide composition on the structure of products obtained by sulfuric acid treatment at elevated temperatures. In: Journal of Structural Chemistry. 2017 ; Vol. 58, No. 6. pp. 1180-1186.

BibTeX

@article{21609c6915014a0d880c1ee7d1cf7d9a,
title = "Effect of the graphite oxide composition on the structure of products obtained by sulfuric acid treatment at elevated temperatures",
abstract = "The electronic structure and functional composition of products of the graphite oxide (GO) interaction with concentrated sulfuric acid (H2SO4) are studied, depending on the oxygen content in the precursor and the treatment temperature. X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure (NEXAFS) measured at the CK edge, and infrared spectroscopy are used to show the recovery of the π electron system of graphene planes at a temperature of 200 °C. Aggregation of functional groups in GO containing more than 40% of oxygen causes the formation of vacancy defects in the planes with treatment. When the GO treatment temperature rises to 280 °C, the oxidation of the basal plane π-regions occurs. The results can underlie the control of the functional composition, vacancy number, and size in graphite materials.",
keywords = "defects, graphene, graphite oxide, heating in sulfuric acid, NEXAFS, XPS, GRAPHENE OXIDE, DEFECTS, FILMS, REDUCTION, RAMAN-SPECTROSCOPY, WATER",
author = "Stolyarova, {S. G.} and Kobeleva, {E. S.} and Asanov, {I. P.} and Okotrub, {A. V.} and Bulusheva, {L. G.}",
year = "2017",
month = nov,
day = "1",
doi = "10.1134/S0022476617060166",
language = "English",
volume = "58",
pages = "1180--1186",
journal = "Journal of Structural Chemistry",
issn = "0022-4766",
publisher = "Springer GmbH & Co, Auslieferungs-Gesellschaf",
number = "6",

}

RIS

TY - JOUR

T1 - Effect of the graphite oxide composition on the structure of products obtained by sulfuric acid treatment at elevated temperatures

AU - Stolyarova, S. G.

AU - Kobeleva, E. S.

AU - Asanov, I. P.

AU - Okotrub, A. V.

AU - Bulusheva, L. G.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - The electronic structure and functional composition of products of the graphite oxide (GO) interaction with concentrated sulfuric acid (H2SO4) are studied, depending on the oxygen content in the precursor and the treatment temperature. X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure (NEXAFS) measured at the CK edge, and infrared spectroscopy are used to show the recovery of the π electron system of graphene planes at a temperature of 200 °C. Aggregation of functional groups in GO containing more than 40% of oxygen causes the formation of vacancy defects in the planes with treatment. When the GO treatment temperature rises to 280 °C, the oxidation of the basal plane π-regions occurs. The results can underlie the control of the functional composition, vacancy number, and size in graphite materials.

AB - The electronic structure and functional composition of products of the graphite oxide (GO) interaction with concentrated sulfuric acid (H2SO4) are studied, depending on the oxygen content in the precursor and the treatment temperature. X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure (NEXAFS) measured at the CK edge, and infrared spectroscopy are used to show the recovery of the π electron system of graphene planes at a temperature of 200 °C. Aggregation of functional groups in GO containing more than 40% of oxygen causes the formation of vacancy defects in the planes with treatment. When the GO treatment temperature rises to 280 °C, the oxidation of the basal plane π-regions occurs. The results can underlie the control of the functional composition, vacancy number, and size in graphite materials.

KW - defects

KW - graphene

KW - graphite oxide

KW - heating in sulfuric acid

KW - NEXAFS

KW - XPS

KW - GRAPHENE OXIDE

KW - DEFECTS

KW - FILMS

KW - REDUCTION

KW - RAMAN-SPECTROSCOPY

KW - WATER

UR - http://www.scopus.com/inward/record.url?scp=85036494503&partnerID=8YFLogxK

U2 - 10.1134/S0022476617060166

DO - 10.1134/S0022476617060166

M3 - Article

AN - SCOPUS:85036494503

VL - 58

SP - 1180

EP - 1186

JO - Journal of Structural Chemistry

JF - Journal of Structural Chemistry

SN - 0022-4766

IS - 6

ER -

ID: 9648542