Research output: Contribution to journal › Article › peer-review
Effect of the graphite oxide composition on the structure of products obtained by sulfuric acid treatment at elevated temperatures. / Stolyarova, S. G.; Kobeleva, E. S.; Asanov, I. P. et al.
In: Journal of Structural Chemistry, Vol. 58, No. 6, 01.11.2017, p. 1180-1186.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Effect of the graphite oxide composition on the structure of products obtained by sulfuric acid treatment at elevated temperatures
AU - Stolyarova, S. G.
AU - Kobeleva, E. S.
AU - Asanov, I. P.
AU - Okotrub, A. V.
AU - Bulusheva, L. G.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - The electronic structure and functional composition of products of the graphite oxide (GO) interaction with concentrated sulfuric acid (H2SO4) are studied, depending on the oxygen content in the precursor and the treatment temperature. X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure (NEXAFS) measured at the CK edge, and infrared spectroscopy are used to show the recovery of the π electron system of graphene planes at a temperature of 200 °C. Aggregation of functional groups in GO containing more than 40% of oxygen causes the formation of vacancy defects in the planes with treatment. When the GO treatment temperature rises to 280 °C, the oxidation of the basal plane π-regions occurs. The results can underlie the control of the functional composition, vacancy number, and size in graphite materials.
AB - The electronic structure and functional composition of products of the graphite oxide (GO) interaction with concentrated sulfuric acid (H2SO4) are studied, depending on the oxygen content in the precursor and the treatment temperature. X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure (NEXAFS) measured at the CK edge, and infrared spectroscopy are used to show the recovery of the π electron system of graphene planes at a temperature of 200 °C. Aggregation of functional groups in GO containing more than 40% of oxygen causes the formation of vacancy defects in the planes with treatment. When the GO treatment temperature rises to 280 °C, the oxidation of the basal plane π-regions occurs. The results can underlie the control of the functional composition, vacancy number, and size in graphite materials.
KW - defects
KW - graphene
KW - graphite oxide
KW - heating in sulfuric acid
KW - NEXAFS
KW - XPS
KW - GRAPHENE OXIDE
KW - DEFECTS
KW - FILMS
KW - REDUCTION
KW - RAMAN-SPECTROSCOPY
KW - WATER
UR - http://www.scopus.com/inward/record.url?scp=85036494503&partnerID=8YFLogxK
U2 - 10.1134/S0022476617060166
DO - 10.1134/S0022476617060166
M3 - Article
AN - SCOPUS:85036494503
VL - 58
SP - 1180
EP - 1186
JO - Journal of Structural Chemistry
JF - Journal of Structural Chemistry
SN - 0022-4766
IS - 6
ER -
ID: 9648542