Research output: Contribution to journal › Article › peer-review
Effect of the amorphous germanium film thickness on the process of gold-induced crystallization. / Zamchiy, A. O.; Nepomnyashchikh, V. A.; Konstantinov, V. O. et al.
In: Thermophysics and Aeromechanics, Vol. 31, No. 6, 11.2024, p. 1271-1276.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Effect of the amorphous germanium film thickness on the process of gold-induced crystallization
AU - Zamchiy, A. O.
AU - Nepomnyashchikh, V. A.
AU - Konstantinov, V. O.
AU - Starinskaya, E. M.
AU - Volodin, V. A.
AU - Baranov, E. A.
N1 - The study was supported by the Russian Science Foundation (Grant No. 22-79-10079, https://rscf.ru/en/project/22-79-10079/) (diagnostics and annealing of thin films) and was performed within the framework of the state assignment of the Kutateladze Institute of Thermophysics SB RAS No. AAAA-A19-119061490008-3 (synthesis of thin films). The thin films were synthesized at a unique scientific facility “Vacuum gas-dynamic complex” at IT SB RAS. The equipment for Raman scattering spectra recording was provided by the Center for collective use of scientific equipment “VTAN” at the Novosibirsk State University.
PY - 2024/11
Y1 - 2024/11
N2 - Results of an experimental study of gold-induced crystallization of thin films of amorphous germanium (a-Ge) are reported. The Raman spectroscopy and optical microscopy are applied to study the influence of the initial thickness of the a-Ge film on the morphology of the material obtained by means of annealing of bilayer Au/a-Ge structures. The a-Ge/Au thickness ratios equal to 1.1 and 2.3 are considered. Low-temperature annealing of quartz/Au/a-Ge samples is performed in a high-vacuum atmosphere (10−4 Pa) at a temperature of 300°C for 24 h. The Raman spectroscopy results show that sample annealing leads to complete crystallization of a-Ge with formation of polycrystalline germanium (poly-Ge) in both bottom and upper layers of the samples. For the sample with a-Ge/Au = 2.3, a continuous poly-Ge film is obtained on the substrate due to implementation of the layer exchange mechanism. In this case, poly-Ge hillocks are formed in the upper layer of the sample due to a-Ge crystallization in the presence of Au. For the sample with a-Ge/Au = 1.1, a non-continuous poly-Ge film with a coverage degree of 30 % is formed in the bottom layer. The poly-Ge material is formed in the upper layer due to the processes of “explosive” crystallization and secondary crystallization induced by Au.
AB - Results of an experimental study of gold-induced crystallization of thin films of amorphous germanium (a-Ge) are reported. The Raman spectroscopy and optical microscopy are applied to study the influence of the initial thickness of the a-Ge film on the morphology of the material obtained by means of annealing of bilayer Au/a-Ge structures. The a-Ge/Au thickness ratios equal to 1.1 and 2.3 are considered. Low-temperature annealing of quartz/Au/a-Ge samples is performed in a high-vacuum atmosphere (10−4 Pa) at a temperature of 300°C for 24 h. The Raman spectroscopy results show that sample annealing leads to complete crystallization of a-Ge with formation of polycrystalline germanium (poly-Ge) in both bottom and upper layers of the samples. For the sample with a-Ge/Au = 2.3, a continuous poly-Ge film is obtained on the substrate due to implementation of the layer exchange mechanism. In this case, poly-Ge hillocks are formed in the upper layer of the sample due to a-Ge crystallization in the presence of Au. For the sample with a-Ge/Au = 1.1, a non-continuous poly-Ge film with a coverage degree of 30 % is formed in the bottom layer. The poly-Ge material is formed in the upper layer due to the processes of “explosive” crystallization and secondary crystallization induced by Au.
KW - gold-induced crystallization
KW - hillocks
KW - polycrystalline germanium
KW - thin films
UR - https://www.scopus.com/pages/publications/105011380954
UR - https://www.elibrary.ru/item.asp?id=80436740
UR - https://www.mendeley.com/catalogue/cdf62a04-e590-373b-8517-33ca1b461278/
U2 - 10.1134/S0869864324060192
DO - 10.1134/S0869864324060192
M3 - Article
VL - 31
SP - 1271
EP - 1276
JO - Thermophysics and Aeromechanics
JF - Thermophysics and Aeromechanics
SN - 0869-8643
IS - 6
ER -
ID: 68674927