Standard

Effect of the amorphous germanium film thickness on the process of gold-induced crystallization. / Zamchiy, A. O.; Nepomnyashchikh, V. A.; Konstantinov, V. O. et al.

In: Thermophysics and Aeromechanics, Vol. 31, No. 6, 11.2024, p. 1271-1276.

Research output: Contribution to journalArticlepeer-review

Harvard

Zamchiy, AO, Nepomnyashchikh, VA, Konstantinov, VO, Starinskaya, EM, Volodin, VA & Baranov, EA 2024, 'Effect of the amorphous germanium film thickness on the process of gold-induced crystallization', Thermophysics and Aeromechanics, vol. 31, no. 6, pp. 1271-1276. https://doi.org/10.1134/S0869864324060192

APA

Zamchiy, A. O., Nepomnyashchikh, V. A., Konstantinov, V. O., Starinskaya, E. M., Volodin, V. A., & Baranov, E. A. (2024). Effect of the amorphous germanium film thickness on the process of gold-induced crystallization. Thermophysics and Aeromechanics, 31(6), 1271-1276. https://doi.org/10.1134/S0869864324060192

Vancouver

Zamchiy AO, Nepomnyashchikh VA, Konstantinov VO, Starinskaya EM, Volodin VA, Baranov EA. Effect of the amorphous germanium film thickness on the process of gold-induced crystallization. Thermophysics and Aeromechanics. 2024 Nov;31(6):1271-1276. doi: 10.1134/S0869864324060192

Author

Zamchiy, A. O. ; Nepomnyashchikh, V. A. ; Konstantinov, V. O. et al. / Effect of the amorphous germanium film thickness on the process of gold-induced crystallization. In: Thermophysics and Aeromechanics. 2024 ; Vol. 31, No. 6. pp. 1271-1276.

BibTeX

@article{a73f51e5779541b78e6e704902d375fc,
title = "Effect of the amorphous germanium film thickness on the process of gold-induced crystallization",
abstract = "Results of an experimental study of gold-induced crystallization of thin films of amorphous germanium (a-Ge) are reported. The Raman spectroscopy and optical microscopy are applied to study the influence of the initial thickness of the a-Ge film on the morphology of the material obtained by means of annealing of bilayer Au/a-Ge structures. The a-Ge/Au thickness ratios equal to 1.1 and 2.3 are considered. Low-temperature annealing of quartz/Au/a-Ge samples is performed in a high-vacuum atmosphere (10−4 Pa) at a temperature of 300°C for 24 h. The Raman spectroscopy results show that sample annealing leads to complete crystallization of a-Ge with formation of polycrystalline germanium (poly-Ge) in both bottom and upper layers of the samples. For the sample with a-Ge/Au = 2.3, a continuous poly-Ge film is obtained on the substrate due to implementation of the layer exchange mechanism. In this case, poly-Ge hillocks are formed in the upper layer of the sample due to a-Ge crystallization in the presence of Au. For the sample with a-Ge/Au = 1.1, a non-continuous poly-Ge film with a coverage degree of 30 % is formed in the bottom layer. The poly-Ge material is formed in the upper layer due to the processes of “explosive” crystallization and secondary crystallization induced by Au.",
keywords = "gold-induced crystallization, hillocks, polycrystalline germanium, thin films",
author = "Zamchiy, {A. O.} and Nepomnyashchikh, {V. A.} and Konstantinov, {V. O.} and Starinskaya, {E. M.} and Volodin, {V. A.} and Baranov, {E. A.}",
note = "The study was supported by the Russian Science Foundation (Grant No. 22-79-10079, https://rscf.ru/en/project/22-79-10079/) (diagnostics and annealing of thin films) and was performed within the framework of the state assignment of the Kutateladze Institute of Thermophysics SB RAS No. AAAA-A19-119061490008-3 (synthesis of thin films). The thin films were synthesized at a unique scientific facility “Vacuum gas-dynamic complex” at IT SB RAS. The equipment for Raman scattering spectra recording was provided by the Center for collective use of scientific equipment “VTAN” at the Novosibirsk State University.",
year = "2024",
month = nov,
doi = "10.1134/S0869864324060192",
language = "English",
volume = "31",
pages = "1271--1276",
journal = "Thermophysics and Aeromechanics",
issn = "0869-8643",
publisher = "Pleiades Publishing",
number = "6",

}

RIS

TY - JOUR

T1 - Effect of the amorphous germanium film thickness on the process of gold-induced crystallization

AU - Zamchiy, A. O.

AU - Nepomnyashchikh, V. A.

AU - Konstantinov, V. O.

AU - Starinskaya, E. M.

AU - Volodin, V. A.

AU - Baranov, E. A.

N1 - The study was supported by the Russian Science Foundation (Grant No. 22-79-10079, https://rscf.ru/en/project/22-79-10079/) (diagnostics and annealing of thin films) and was performed within the framework of the state assignment of the Kutateladze Institute of Thermophysics SB RAS No. AAAA-A19-119061490008-3 (synthesis of thin films). The thin films were synthesized at a unique scientific facility “Vacuum gas-dynamic complex” at IT SB RAS. The equipment for Raman scattering spectra recording was provided by the Center for collective use of scientific equipment “VTAN” at the Novosibirsk State University.

PY - 2024/11

Y1 - 2024/11

N2 - Results of an experimental study of gold-induced crystallization of thin films of amorphous germanium (a-Ge) are reported. The Raman spectroscopy and optical microscopy are applied to study the influence of the initial thickness of the a-Ge film on the morphology of the material obtained by means of annealing of bilayer Au/a-Ge structures. The a-Ge/Au thickness ratios equal to 1.1 and 2.3 are considered. Low-temperature annealing of quartz/Au/a-Ge samples is performed in a high-vacuum atmosphere (10−4 Pa) at a temperature of 300°C for 24 h. The Raman spectroscopy results show that sample annealing leads to complete crystallization of a-Ge with formation of polycrystalline germanium (poly-Ge) in both bottom and upper layers of the samples. For the sample with a-Ge/Au = 2.3, a continuous poly-Ge film is obtained on the substrate due to implementation of the layer exchange mechanism. In this case, poly-Ge hillocks are formed in the upper layer of the sample due to a-Ge crystallization in the presence of Au. For the sample with a-Ge/Au = 1.1, a non-continuous poly-Ge film with a coverage degree of 30 % is formed in the bottom layer. The poly-Ge material is formed in the upper layer due to the processes of “explosive” crystallization and secondary crystallization induced by Au.

AB - Results of an experimental study of gold-induced crystallization of thin films of amorphous germanium (a-Ge) are reported. The Raman spectroscopy and optical microscopy are applied to study the influence of the initial thickness of the a-Ge film on the morphology of the material obtained by means of annealing of bilayer Au/a-Ge structures. The a-Ge/Au thickness ratios equal to 1.1 and 2.3 are considered. Low-temperature annealing of quartz/Au/a-Ge samples is performed in a high-vacuum atmosphere (10−4 Pa) at a temperature of 300°C for 24 h. The Raman spectroscopy results show that sample annealing leads to complete crystallization of a-Ge with formation of polycrystalline germanium (poly-Ge) in both bottom and upper layers of the samples. For the sample with a-Ge/Au = 2.3, a continuous poly-Ge film is obtained on the substrate due to implementation of the layer exchange mechanism. In this case, poly-Ge hillocks are formed in the upper layer of the sample due to a-Ge crystallization in the presence of Au. For the sample with a-Ge/Au = 1.1, a non-continuous poly-Ge film with a coverage degree of 30 % is formed in the bottom layer. The poly-Ge material is formed in the upper layer due to the processes of “explosive” crystallization and secondary crystallization induced by Au.

KW - gold-induced crystallization

KW - hillocks

KW - polycrystalline germanium

KW - thin films

UR - https://www.scopus.com/pages/publications/105011380954

UR - https://www.elibrary.ru/item.asp?id=80436740

UR - https://www.mendeley.com/catalogue/cdf62a04-e590-373b-8517-33ca1b461278/

U2 - 10.1134/S0869864324060192

DO - 10.1134/S0869864324060192

M3 - Article

VL - 31

SP - 1271

EP - 1276

JO - Thermophysics and Aeromechanics

JF - Thermophysics and Aeromechanics

SN - 0869-8643

IS - 6

ER -

ID: 68674927