Effect of non-stoichiometric germanosilicate glass composition for enhanced photosensitivity of ITO/GeSixOy/Si Schottky diodes in a wide spectral range

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Effect of non-stoichiometric germanosilicate glass composition for enhanced photosensitivity of ITO/GeSixOy/Si Schottky diodes in a wide spectral range. / Hamoud, G. A.; Kamaev, G. N.; Vergnat, M. et al.

In: Sensors and Actuators, A: Physical, Vol. 410, No. P1, 118207, 01.11.2026.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{c45709d4e24942e4a7c0661dfeb6becb,

title = "Effect of non-stoichiometric germanosilicate glass composition for enhanced photosensitivity of ITO/GeSixOy/Si Schottky diodes in a wide spectral range",

abstract = "This study demonstrates that non-stoichiometric germanosilicate glass layers of the form [GeOx]v[SiO2]1-v (x∼1.1, 0.24 ≤ν≤1), when embedded as a dielectric layer in Metal-Insulator Semiconductor (MIS) structures on n- and p-type silicon substrates, effectively suppress dark current without significantly reducing the photocurrent. All MIS Schottky-barrier photodiodes incorporating an embedded [GeOx]v[SiO2]1-v layer and an indium tin oxide (ITO) top contact exhibited broad optical photosensitivity, spanning the ultraviolet (UV) to near-infrared (NIR) spectral ranges. The maximum specific detectivity reached D*= 7× 1012 Jones for the ITO/[GeOx]0.74[SiO2]0.26/n-Si MIS photodiode. This approach paves the way for the development of simple, low-cost, and highly sensitive broadband photodetectors.",

keywords = "GeSixOy, ITO, MIS structures, Photocurrent amplification, Schottky barrier",

author = "Hamoud, {G. A.} and Kamaev, {G. N.} and M. Vergnat and Volodin, {V. A.}",

note = "This work was supported by the Ministry of Science and Higher Education of the Russian Federation under Project No. FSUS−2024–0020. Additional funding was provided through the State Assignment (theme No. FWGW−2025–0023).",

year = "2026",

month = nov,

day = "1",

doi = "10.1016/j.sna.2026.118207",

language = "English",

volume = "410",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier Science Publishing Company, Inc.",

number = "P1",

}

RIS

TY - JOUR

T1 - Effect of non-stoichiometric germanosilicate glass composition for enhanced photosensitivity of ITO/GeSixOy/Si Schottky diodes in a wide spectral range

AU - Hamoud, G. A.

AU - Kamaev, G. N.

AU - Vergnat, M.

AU - Volodin, V. A.

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation under Project No. FSUS−2024–0020. Additional funding was provided through the State Assignment (theme No. FWGW−2025–0023).

PY - 2026/11/1

Y1 - 2026/11/1

N2 - This study demonstrates that non-stoichiometric germanosilicate glass layers of the form [GeOx]v[SiO2]1-v (x∼1.1, 0.24 ≤ν≤1), when embedded as a dielectric layer in Metal-Insulator Semiconductor (MIS) structures on n- and p-type silicon substrates, effectively suppress dark current without significantly reducing the photocurrent. All MIS Schottky-barrier photodiodes incorporating an embedded [GeOx]v[SiO2]1-v layer and an indium tin oxide (ITO) top contact exhibited broad optical photosensitivity, spanning the ultraviolet (UV) to near-infrared (NIR) spectral ranges. The maximum specific detectivity reached D*= 7× 1012 Jones for the ITO/[GeOx]0.74[SiO2]0.26/n-Si MIS photodiode. This approach paves the way for the development of simple, low-cost, and highly sensitive broadband photodetectors.

AB - This study demonstrates that non-stoichiometric germanosilicate glass layers of the form [GeOx]v[SiO2]1-v (x∼1.1, 0.24 ≤ν≤1), when embedded as a dielectric layer in Metal-Insulator Semiconductor (MIS) structures on n- and p-type silicon substrates, effectively suppress dark current without significantly reducing the photocurrent. All MIS Schottky-barrier photodiodes incorporating an embedded [GeOx]v[SiO2]1-v layer and an indium tin oxide (ITO) top contact exhibited broad optical photosensitivity, spanning the ultraviolet (UV) to near-infrared (NIR) spectral ranges. The maximum specific detectivity reached D*= 7× 1012 Jones for the ITO/[GeOx]0.74[SiO2]0.26/n-Si MIS photodiode. This approach paves the way for the development of simple, low-cost, and highly sensitive broadband photodetectors.

KW - GeSixOy

KW - ITO

KW - MIS structures

KW - Photocurrent amplification

KW - Schottky barrier

UR - https://www.scopus.com/pages/publications/105044281609

UR - https://www.mendeley.com/catalogue/95cdc5a6-b9df-345f-b993-6f902a94cfda/

U2 - 10.1016/j.sna.2026.118207

DO - 10.1016/j.sna.2026.118207

M3 - Article

VL - 410

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - P1

M1 - 118207

ER -

ID: 80949808