Effect of crystal structure on the Young's modulus of GaP nanowires

Standard

Effect of crystal structure on the Young's modulus of GaP nanowires. / Alekseev, Prokhor A.; Borodin, Bogdan R.; Geydt, Pavel et al.

In: Nanotechnology, Vol. 32, No. 38, 385706, 17.09.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Alekseev, PA, Borodin, BR, Geydt, P, Khayrudinov, V, Bespalova, K, Kirilenko, DA, Reznik, RR, Nashchekin, AV, Haggrén, T, Lähderanta, E, Cirlin, GE, Lipsanen, H & Dunaevskiy, MS 2021, 'Effect of crystal structure on the Young's modulus of GaP nanowires', Nanotechnology, vol. 32, no. 38, 385706. https://doi.org/10.1088/1361-6528/ac0ac7

APA

Alekseev, P. A., Borodin, B. R., Geydt, P., Khayrudinov, V., Bespalova, K., Kirilenko, D. A., Reznik, R. R., Nashchekin, A. V., Haggrén, T., Lähderanta, E., Cirlin, G. E., Lipsanen, H., & Dunaevskiy, M. S. (2021). Effect of crystal structure on the Young's modulus of GaP nanowires. Nanotechnology, 32(38), [385706]. https://doi.org/10.1088/1361-6528/ac0ac7

Vancouver

Alekseev PA, Borodin BR, Geydt P, Khayrudinov V, Bespalova K, Kirilenko DA et al. Effect of crystal structure on the Young's modulus of GaP nanowires. Nanotechnology. 2021 Sept 17;32(38):385706. doi: 10.1088/1361-6528/ac0ac7

Author

Alekseev, Prokhor A. ; Borodin, Bogdan R. ; Geydt, Pavel et al. / Effect of crystal structure on the Young's modulus of GaP nanowires. In: Nanotechnology. 2021 ; Vol. 32, No. 38.

BibTeX

@article{b0256b515b3444b5bf65bc646ebd55b4,

title = "Effect of crystal structure on the Young's modulus of GaP nanowires",

abstract = "Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 20 GPa for ZB NWs, and 157 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible. ",

keywords = "atomic force microscopy, bending, GaP, nanowire, WZ/ZB, Young s modulus",

author = "Alekseev, {Prokhor A.} and Borodin, {Bogdan R.} and Pavel Geydt and Vladislav Khayrudinov and Kristina Bespalova and Kirilenko, {Demid A.} and Reznik, {Rodion R.} and Nashchekin, {Alexey V.} and Tuomas Haggr{\'e}n and Erkki L{\"a}hderanta and Cirlin, {George E.} and Harri Lipsanen and Dunaevskiy, {Mikhail S.}",

year = "2021",

month = sep,

day = "17",

doi = "10.1088/1361-6528/ac0ac7",

language = "English",

volume = "32",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "38",

}

RIS

TY - JOUR

T1 - Effect of crystal structure on the Young's modulus of GaP nanowires

AU - Alekseev, Prokhor A.

AU - Borodin, Bogdan R.

AU - Geydt, Pavel

AU - Khayrudinov, Vladislav

AU - Bespalova, Kristina

AU - Kirilenko, Demid A.

AU - Reznik, Rodion R.

AU - Nashchekin, Alexey V.

AU - Haggrén, Tuomas

AU - Lähderanta, Erkki

AU - Cirlin, George E.

AU - Lipsanen, Harri

AU - Dunaevskiy, Mikhail S.

PY - 2021/9/17

Y1 - 2021/9/17

N2 - Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 20 GPa for ZB NWs, and 157 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible.

AB - Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 20 GPa for ZB NWs, and 157 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible.

KW - atomic force microscopy

KW - bending

KW - GaP

KW - nanowire

KW - WZ/ZB

KW - Young s modulus

UR - http://www.scopus.com/inward/record.url?scp=85109974421&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ac0ac7

DO - 10.1088/1361-6528/ac0ac7

M3 - Article

C2 - 34116523

AN - SCOPUS:85109974421

VL - 32

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 38

M1 - 385706

ER -

ID: 29129288