Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

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Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates. / Pokhabov, D. A.; Pogosov, A. G.; Zhdanov, E. Yu et al.

In: Semiconductors, Vol. 54, No. 12, 12.2020, p. 1605-1610.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{0ff828bf6c2b46f4a1a07642a124f5df,

title = "Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates",

abstract = "The conductance of a suspended quantum point contact fabricated on the basis of GaAs/AlGaAs heterostructures with a two-dimensional electron gas and equipped with side gates separated from the constriction using lithographical trenches is investigated. The gate dependences of the conductance of such structures correspond to the unusual double-channel mode with independent quantization of the conductance of two channels, and the conductance of separate channels can be independently controlled using two side gates. The electrostatic-formation mechanism of a two-channel structure inside a single constriction associated with the lateral redistribution of low-mobility X-valley electrons containing superlattice heterostructure layers, which leads to the formation of a potential barrier separating the conductivity electrons into two channels symmetrically shifted towards the lithographic trenches, specifying the nanostructure geometry, is considered.",

keywords = "conductance quantization, multichannel transport, quantum point contact, suspended semiconductor nanostructures",

author = "Pokhabov, {D. A.} and Pogosov, {A. G.} and Zhdanov, {E. Yu} and Bakarov, {A. K.} and Shklyaev, {A. A.}",

year = "2020",

month = dec,

doi = "10.1134/S1063782620120301",

language = "English",

volume = "54",

pages = "1605--1610",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "12",

}

RIS

TY - JOUR

T1 - Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

AU - Pokhabov, D. A.

AU - Pogosov, A. G.

AU - Zhdanov, E. Yu

AU - Bakarov, A. K.

AU - Shklyaev, A. A.

PY - 2020/12

Y1 - 2020/12

N2 - The conductance of a suspended quantum point contact fabricated on the basis of GaAs/AlGaAs heterostructures with a two-dimensional electron gas and equipped with side gates separated from the constriction using lithographical trenches is investigated. The gate dependences of the conductance of such structures correspond to the unusual double-channel mode with independent quantization of the conductance of two channels, and the conductance of separate channels can be independently controlled using two side gates. The electrostatic-formation mechanism of a two-channel structure inside a single constriction associated with the lateral redistribution of low-mobility X-valley electrons containing superlattice heterostructure layers, which leads to the formation of a potential barrier separating the conductivity electrons into two channels symmetrically shifted towards the lithographic trenches, specifying the nanostructure geometry, is considered.

AB - The conductance of a suspended quantum point contact fabricated on the basis of GaAs/AlGaAs heterostructures with a two-dimensional electron gas and equipped with side gates separated from the constriction using lithographical trenches is investigated. The gate dependences of the conductance of such structures correspond to the unusual double-channel mode with independent quantization of the conductance of two channels, and the conductance of separate channels can be independently controlled using two side gates. The electrostatic-formation mechanism of a two-channel structure inside a single constriction associated with the lateral redistribution of low-mobility X-valley electrons containing superlattice heterostructure layers, which leads to the formation of a potential barrier separating the conductivity electrons into two channels symmetrically shifted towards the lithographic trenches, specifying the nanostructure geometry, is considered.

KW - conductance quantization

KW - multichannel transport

KW - quantum point contact

KW - suspended semiconductor nanostructures

UR - http://www.scopus.com/inward/record.url?scp=85097085781&partnerID=8YFLogxK

U2 - 10.1134/S1063782620120301

DO - 10.1134/S1063782620120301

M3 - Article

AN - SCOPUS:85097085781

VL - 54

SP - 1605

EP - 1610

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 26202508