Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure › Research Explorer

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Diffusion-Controlled growth of Ge nanocrystals in SiO₂ films under conditions of ion synthesis at high pressure

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782617100189
Final published version

I. E. Tyschenko
A. G. Cherkov

Original language	English
Pages (from-to)	1364-1369
Number of pages	6
Journal	Semiconductors
Volume	51
Issue number	10
DOIs	https://doi.org/10.1134/S1063782617100189
Publication status	Published - 1 Oct 2017

OECD FOS+WOS

Research areas

GERMANIUM, SILICON, FILMS, SIO2

ID: 12949280