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Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band. / Igor, Osinnykh V.; Malin, Timur V.; Zhuravlev, Konstantin S.

In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Vol. 16, No. 3, 06.2023, p. 33-38.

Research output: Contribution to journal › Article › peer-review

Harvard

Igor, OV, Malin, TV & Zhuravlev, KS 2023, 'Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band', St. Petersburg State Polytechnical University Journal: Physics and Mathematics, vol. 16, no. 3, pp. 33-38. https://doi.org/10.18721/JPM.161.305

APA

Igor, O. V., Malin, T. V., & Zhuravlev, K. S. (2023). Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band. St. Petersburg State Polytechnical University Journal: Physics and Mathematics, 16(3), 33-38. https://doi.org/10.18721/JPM.161.305

Vancouver

Igor OV, Malin TV, Zhuravlev KS. Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band. St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023 Jun;16(3):33-38. doi: 10.18721/JPM.161.305

Author

Igor, Osinnykh V. ; Malin, Timur V. ; Zhuravlev, Konstantin S. / Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band. In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023 ; Vol. 16, No. 3. pp. 33-38.

BibTeX

@article{cad5b4ea09584a7586fbdc931bfe393a,
title = "Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band",
abstract = "In this paper, we present the results of the calculated and experimental dependence of photoluminescence on the excitation power density for GaN:Si layers grown by molecular beam epitaxy. A model was constructed for transitions in a compensated semiconductor upon interband generation of electron-hole pairs. It is shown that the dependence of the photoluminescence intensity on the excitation power density can be used to determine the recombination mechanism and concentrations of donors and acceptors in semiconductor.",
keywords = "GaN, ammonia-MBE, heterostructures, photoluminescence, point defects",
author = "Igor, {Osinnykh V.} and Malin, {Timur V.} and Zhuravlev, {Konstantin S.}",
note = "The study was funded by State Assignment “Ammonia molecular beam epitaxy of GaN heterostructures on silicon substrates for power and microwave transistors” (Topic ID FWGW-2022-0015). Публикация для корректировки.",
year = "2023",
month = jun,
doi = "10.18721/JPM.161.305",
language = "English",
volume = "16",
pages = "33--38",
journal = "Научно-технические ведомости СПбГПУ. Физико-математические науки Cанкт-Петербургский политехнический университет Петра Великого ru",
issn = "2304-9782",
publisher = "Санкт-Петербургский политехнический университет Петра Великого",
number = "3",

}

RIS

TY - JOUR

T1 - Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

AU - Igor, Osinnykh V.

AU - Malin, Timur V.

AU - Zhuravlev, Konstantin S.

N1 - The study was funded by State Assignment “Ammonia molecular beam epitaxy of GaN heterostructures on silicon substrates for power and microwave transistors” (Topic ID FWGW-2022-0015). Публикация для корректировки.

PY - 2023/6

Y1 - 2023/6

N2 - In this paper, we present the results of the calculated and experimental dependence of photoluminescence on the excitation power density for GaN:Si layers grown by molecular beam epitaxy. A model was constructed for transitions in a compensated semiconductor upon interband generation of electron-hole pairs. It is shown that the dependence of the photoluminescence intensity on the excitation power density can be used to determine the recombination mechanism and concentrations of donors and acceptors in semiconductor.

AB - In this paper, we present the results of the calculated and experimental dependence of photoluminescence on the excitation power density for GaN:Si layers grown by molecular beam epitaxy. A model was constructed for transitions in a compensated semiconductor upon interband generation of electron-hole pairs. It is shown that the dependence of the photoluminescence intensity on the excitation power density can be used to determine the recombination mechanism and concentrations of donors and acceptors in semiconductor.

KW - GaN

KW - ammonia-MBE

KW - heterostructures

KW - photoluminescence

KW - point defects

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85164676646&origin=inward&txGid=bad66a4267b7be5af17781b970dd159e

UR - https://www.mendeley.com/catalogue/3f847d61-41c7-3416-a3ae-ac22d3192654/

U2 - 10.18721/JPM.161.305

DO - 10.18721/JPM.161.305

M3 - Article

VL - 16

SP - 33

EP - 38

JO - Научно-технические ведомости СПбГПУ. Физико-математические науки Cанкт-Петербургский политехнический университет Петра Великого ru

JF - Научно-технические ведомости СПбГПУ. Физико-математические науки Cанкт-Петербургский политехнический университет Петра Великого ru

SN - 2304-9782

IS - 3

ER -

ID: 59588849