Research output: Contribution to journal › Article › peer-review
Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy. / Gilinsky, A. M.; Dmitriev, D. V.; Toropov, A. I. et al.
In: Semiconductor Science and Technology, Vol. 32, No. 9, 095009, 17.08.2017.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy
AU - Gilinsky, A. M.
AU - Dmitriev, D. V.
AU - Toropov, A. I.
AU - Zhuravlev, K. S.
PY - 2017/8/17
Y1 - 2017/8/17
N2 - The photoluminescence (PL) of InAlAs grown on InP has been studied in a wide range of temperatures and excitation intensities. A novel emission ascribed to the presence of defects has been found by about 120-180 meV below the near band edge (NBE) line. The novel wide PL band is observed in the spectra only in a limited range of temperatures of 50-160 K, and is seen neither at liquid helium nor at room temperatures. The analysis of the PL behaviour with sample temperature and excitation power together with non-stationary PL kinetics allows us to conclude that both the NBE PL and the novel PL band are controlled by transitions via states of band tails formed due to alloy disorder in these films. The NBE PL is caused by recombination of carriers in the band tails, while deep levels related to defects and located in the same regions as the deepest band tail states are supposedly involved in the defect-related PL transitions. We demonstrate that no defect-related PL is found in the spectra if quasi-stoichiometric growth conditions were used during film growth, which resulted in a PL efficiency by about 1-2 orders of magnitude greater than that of samples grown under more common As-rich conditions.
AB - The photoluminescence (PL) of InAlAs grown on InP has been studied in a wide range of temperatures and excitation intensities. A novel emission ascribed to the presence of defects has been found by about 120-180 meV below the near band edge (NBE) line. The novel wide PL band is observed in the spectra only in a limited range of temperatures of 50-160 K, and is seen neither at liquid helium nor at room temperatures. The analysis of the PL behaviour with sample temperature and excitation power together with non-stationary PL kinetics allows us to conclude that both the NBE PL and the novel PL band are controlled by transitions via states of band tails formed due to alloy disorder in these films. The NBE PL is caused by recombination of carriers in the band tails, while deep levels related to defects and located in the same regions as the deepest band tail states are supposedly involved in the defect-related PL transitions. We demonstrate that no defect-related PL is found in the spectra if quasi-stoichiometric growth conditions were used during film growth, which resulted in a PL efficiency by about 1-2 orders of magnitude greater than that of samples grown under more common As-rich conditions.
KW - defects
KW - InAlAs/InP
KW - localization
KW - photoluminescence
KW - S-shaped temperature dependence
KW - PHOTOLUMINESCENCE
KW - TEMPERATURE-DEPENDENCE
KW - ELECTRONS
KW - localisation
KW - IN0.52AL0.48AS
KW - TRANSISTORS
KW - AL0.48IN0.52AS
KW - TRANSITIONS
KW - EMISSION
KW - BREAKDOWN
UR - http://www.scopus.com/inward/record.url?scp=85028776227&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aa78c6
DO - 10.1088/1361-6641/aa78c6
M3 - Article
AN - SCOPUS:85028776227
VL - 32
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
M1 - 095009
ER -
ID: 9561648