Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	095009
Number of pages	8
Journal	Semiconductor Science and Technology
Volume	32
Issue number	9
DOIs	https://doi.org/10.1088/1361-6641/aa78c6
Publication status	Published - 17 Aug 2017

defects, InAlAs/InP, localization, photoluminescence, S-shaped temperature dependence, PHOTOLUMINESCENCE, TEMPERATURE-DEPENDENCE, ELECTRONS, localisation, IN0.52AL0.48AS, TRANSISTORS, AL0.48IN0.52AS, TRANSITIONS, EMISSION, BREAKDOWN

ID: 9561648