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Crystal structure of thin CaSi2 films grown by radiation-induced epitaxy. / Kacyuba, Aleksey V.; Dvurechenskii, Anatoly V.; Kamaev, Genadiy N. et al.

In: Journal of Crystal Growth, Vol. 562, 126080, 15.05.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Kacyuba, AV, Dvurechenskii, AV, Kamaev, GN, Volodin, VA & Krupin, AY 2021, 'Crystal structure of thin CaSi2 films grown by radiation-induced epitaxy', Journal of Crystal Growth, vol. 562, 126080. https://doi.org/10.1016/j.jcrysgro.2021.126080

APA

Kacyuba, A. V., Dvurechenskii, A. V., Kamaev, G. N., Volodin, V. A., & Krupin, A. Y. (2021). Crystal structure of thin CaSi2 films grown by radiation-induced epitaxy. Journal of Crystal Growth, 562, [126080]. https://doi.org/10.1016/j.jcrysgro.2021.126080

Vancouver

Kacyuba AV, Dvurechenskii AV, Kamaev GN, Volodin VA, Krupin AY. Crystal structure of thin CaSi2 films grown by radiation-induced epitaxy. Journal of Crystal Growth. 2021 May 15;562:126080. doi: 10.1016/j.jcrysgro.2021.126080

Author

Kacyuba, Aleksey V. ; Dvurechenskii, Anatoly V. ; Kamaev, Genadiy N. et al. / Crystal structure of thin CaSi2 films grown by radiation-induced epitaxy. In: Journal of Crystal Growth. 2021 ; Vol. 562.

BibTeX

@article{c090d32daed34125b5b6b7a5fb3c2067,
title = "Crystal structure of thin CaSi2 films grown by radiation-induced epitaxy",
abstract = "The electron-beam irradiation (electron energy 20 keV, current density 50 μA/m2) effects on the CaF2 films epitaxially grown on a Si(1 1 1) substrate have been studied with Raman spectroscopy (RS). It was found that the radiation-induced phase transition of CaF2 into CaSi2 films takes place at electron-beam irradiation both as during the epitaxial CaF2 film growth and as after completed growth of the film. The temperature dependence studies of the observed radiation-induced phase transition show needs to use substrate heating above 300 °C. The crystal structure of CaSi2 films was found to depend on the thickness of the grown CaF2 film. For thin films (less than 20 nm) crystal structure of CaSi2 films belongs to the trigonal rhombohedral modification 3R (space group R3̅m with a three-layer translational period of silicon substructures in the unit cell 3R). The transition of CaSi2 crystal structure to the trigonal rhombohedral modification a six-layer period material 6R was found for thicker films (>20 nm).",
keywords = "A1. Crystal structure, A1. Nanostructures, A1. Radiation, A3. Molecular beam epitaxy, B1. Calcium compounds, B2. Semiconducting silicon",
author = "Kacyuba, {Aleksey V.} and Dvurechenskii, {Anatoly V.} and Kamaev, {Genadiy N.} and Volodin, {Vladimir A.} and Krupin, {Aleksey Y.}",
note = "Funding Information: This study was supported by the Russian Foundation for Basic Research and by the RosAtom Corporation (Project No. 20-21-00028). Publisher Copyright: {\textcopyright} 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = may,
day = "15",
doi = "10.1016/j.jcrysgro.2021.126080",
language = "English",
volume = "562",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Crystal structure of thin CaSi2 films grown by radiation-induced epitaxy

AU - Kacyuba, Aleksey V.

AU - Dvurechenskii, Anatoly V.

AU - Kamaev, Genadiy N.

AU - Volodin, Vladimir A.

AU - Krupin, Aleksey Y.

N1 - Funding Information: This study was supported by the Russian Foundation for Basic Research and by the RosAtom Corporation (Project No. 20-21-00028). Publisher Copyright: © 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/5/15

Y1 - 2021/5/15

N2 - The electron-beam irradiation (electron energy 20 keV, current density 50 μA/m2) effects on the CaF2 films epitaxially grown on a Si(1 1 1) substrate have been studied with Raman spectroscopy (RS). It was found that the radiation-induced phase transition of CaF2 into CaSi2 films takes place at electron-beam irradiation both as during the epitaxial CaF2 film growth and as after completed growth of the film. The temperature dependence studies of the observed radiation-induced phase transition show needs to use substrate heating above 300 °C. The crystal structure of CaSi2 films was found to depend on the thickness of the grown CaF2 film. For thin films (less than 20 nm) crystal structure of CaSi2 films belongs to the trigonal rhombohedral modification 3R (space group R3̅m with a three-layer translational period of silicon substructures in the unit cell 3R). The transition of CaSi2 crystal structure to the trigonal rhombohedral modification a six-layer period material 6R was found for thicker films (>20 nm).

AB - The electron-beam irradiation (electron energy 20 keV, current density 50 μA/m2) effects on the CaF2 films epitaxially grown on a Si(1 1 1) substrate have been studied with Raman spectroscopy (RS). It was found that the radiation-induced phase transition of CaF2 into CaSi2 films takes place at electron-beam irradiation both as during the epitaxial CaF2 film growth and as after completed growth of the film. The temperature dependence studies of the observed radiation-induced phase transition show needs to use substrate heating above 300 °C. The crystal structure of CaSi2 films was found to depend on the thickness of the grown CaF2 film. For thin films (less than 20 nm) crystal structure of CaSi2 films belongs to the trigonal rhombohedral modification 3R (space group R3̅m with a three-layer translational period of silicon substructures in the unit cell 3R). The transition of CaSi2 crystal structure to the trigonal rhombohedral modification a six-layer period material 6R was found for thicker films (>20 nm).

KW - A1. Crystal structure

KW - A1. Nanostructures

KW - A1. Radiation

KW - A3. Molecular beam epitaxy

KW - B1. Calcium compounds

KW - B2. Semiconducting silicon

UR - http://www.scopus.com/inward/record.url?scp=85101322373&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2021.126080

DO - 10.1016/j.jcrysgro.2021.126080

M3 - Article

AN - SCOPUS:85101322373

VL - 562

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 126080

ER -

ID: 27967173