Standard

Conduction mechanism of metal-TiO2–Si structures. / Kalygina, V. M.; Egorova, I. S.; Prudaev, I. A. et al.

In: Chinese Journal of Physics, Vol. 55, No. 1, 01.02.2017, p. 59-63.

Research output: Contribution to journal › Article › peer-review

Harvard

Kalygina, VM, Egorova, IS, Prudaev, IA, Tolbanov, OP & Atuchin, VV 2017, 'Conduction mechanism of metal-TiO2–Si structures', Chinese Journal of Physics, vol. 55, no. 1, pp. 59-63. https://doi.org/10.1016/j.cjph.2016.08.011

APA

Kalygina, V. M., Egorova, I. S., Prudaev, I. A., Tolbanov, O. P., & Atuchin, V. V. (2017). Conduction mechanism of metal-TiO2–Si structures. Chinese Journal of Physics, 55(1), 59-63. https://doi.org/10.1016/j.cjph.2016.08.011

Vancouver

Kalygina VM, Egorova IS, Prudaev IA, Tolbanov OP, Atuchin VV. Conduction mechanism of metal-TiO2–Si structures. Chinese Journal of Physics. 2017 Feb 1;55(1):59-63. doi: 10.1016/j.cjph.2016.08.011

Author

Kalygina, V. M. ; Egorova, I. S. ; Prudaev, I. A. et al. / Conduction mechanism of metal-TiO2–Si structures. In: Chinese Journal of Physics. 2017 ; Vol. 55, No. 1. pp. 59-63.

BibTeX

@article{2cd88240429b4764a63cd1059fc23fc4,
title = "Conduction mechanism of metal-TiO2–Si structures",
abstract = "The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at temperatures T = 800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T = 283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.",
keywords = "Annealing, Charge carrier generation, Space charge limited current, Titanium oxide film, THIN-FILMS, OXIDE, OPTICAL-PROPERTIES",
author = "Kalygina, {V. M.} and Egorova, {I. S.} and Prudaev, {I. A.} and Tolbanov, {O. P.} and Atuchin, {V. V.}",
year = "2017",
month = feb,
day = "1",
doi = "10.1016/j.cjph.2016.08.011",
language = "English",
volume = "55",
pages = "59--63",
journal = "Chinese Journal of Physics",
issn = "0577-9073",
publisher = "Physical Society of the Republic of China",
number = "1",

}

RIS

TY - JOUR

T1 - Conduction mechanism of metal-TiO2–Si structures

AU - Kalygina, V. M.

AU - Egorova, I. S.

AU - Prudaev, I. A.

AU - Tolbanov, O. P.

AU - Atuchin, V. V.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at temperatures T = 800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T = 283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.

AB - The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at temperatures T = 800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T = 283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.

KW - Annealing

KW - Charge carrier generation

KW - Space charge limited current

KW - Titanium oxide film

KW - THIN-FILMS

KW - OXIDE

KW - OPTICAL-PROPERTIES

UR - http://www.scopus.com/inward/record.url?scp=85010633301&partnerID=8YFLogxK

U2 - 10.1016/j.cjph.2016.08.011

DO - 10.1016/j.cjph.2016.08.011

M3 - Article

AN - SCOPUS:85010633301

VL - 55

SP - 59

EP - 63

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

SN - 0577-9073

IS - 1

ER -

ID: 10313659