Conduction mechanism of metal-TiO2–Si structures › Research Explorer

Novosibirsk State University's Research Portal

Conduction mechanism of metal-TiO₂–Si structures

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1016/j.cjph.2016.08.011
Final published version

V. M. Kalygina
I. S. Egorova
I. A. Prudaev
O. P. Tolbanov
V. V. Atuchin

Original language	English
Pages (from-to)	59-63
Number of pages	5
Journal	Chinese Journal of Physics
Volume	55
Issue number	1
DOIs	https://doi.org/10.1016/j.cjph.2016.08.011
Publication status	Published - 1 Feb 2017

Research areas

Annealing, Charge carrier generation, Space charge limited current, Titanium oxide film, THIN-FILMS, OXIDE, OPTICAL-PROPERTIES

OECD FOS+WOS

ID: 10313659