Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)

Standard

Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface. / Bakin, V. V.; Kosolobov, S. N.; Rozhkov, S. A. et al.

In: JETP Letters, Vol. 108, No. 3, 01.08.2018, p. 180-184.

Research output: Contribution to journal › Article › peer-review

Harvard

Bakin, VV, Kosolobov, SN, Rozhkov, SA , Scheibler, HE & Terekhov, AS 2018, 'Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface', JETP Letters, vol. 108, no. 3, pp. 180-184. https://doi.org/10.1134/S0021364018150031

APA

Bakin, V. V., Kosolobov, S. N., Rozhkov, S. A., Scheibler, H. E., & Terekhov, A. S. (2018). Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface. JETP Letters, 108(3), 180-184. https://doi.org/10.1134/S0021364018150031

Vancouver

Bakin VV, Kosolobov SN, Rozhkov SA , Scheibler HE, Terekhov AS. Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface. JETP Letters. 2018 Aug 1;108(3):180-184. doi: 10.1134/S0021364018150031

Author

Bakin, V. V. ; Kosolobov, S. N. ; Rozhkov, S. A. et al. / Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface. In: JETP Letters. 2018 ; Vol. 108, No. 3. pp. 180-184.

BibTeX

@article{0ea7f26a35384256aab3c3b6b147aa33,

title = "Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface",

abstract = "Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.",

keywords = "NEGATIVE ELECTRON-AFFINITY, P-GAN(0001) SURFACES, GAAS-CS, PHOTOELECTRONS, PHOTOCATHODE, ADSORPTION, STATES",

author = "Bakin, {V. V.} and Kosolobov, {S. N.} and Rozhkov, {S. A.} and Scheibler, {H. E.} and Terekhov, {A. S.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Inc.",

year = "2018",

month = aug,

day = "1",

doi = "10.1134/S0021364018150031",

language = "English",

volume = "108",

pages = "180--184",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",

number = "3",

}

RIS

TY - JOUR

T1 - Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Rozhkov, S. A.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.

AB - Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.

KW - NEGATIVE ELECTRON-AFFINITY

KW - P-GAN(0001) SURFACES

KW - GAAS-CS

KW - PHOTOELECTRONS

KW - PHOTOCATHODE

KW - ADSORPTION

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=85055270504&partnerID=8YFLogxK

U2 - 10.1134/S0021364018150031

DO - 10.1134/S0021364018150031

M3 - Article

AN - SCOPUS:85055270504

VL - 108

SP - 180

EP - 184

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 3

ER -

ID: 17249390