Standard

Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma. / Aksenov, M. S.; Gutakovskii, A. K.; Prosvirin, I. P. et al.

In: Materials Science in Semiconductor Processing, Vol. 102, 104611, 01.11.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Aksenov, MS, Gutakovskii, AK, Prosvirin, IP, Dmitriev, DV, Nedomolkina, AA & Valisheva, NA 2019, 'Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma', Materials Science in Semiconductor Processing, vol. 102, 104611. https://doi.org/10.1016/j.mssp.2019.104611

APA

Aksenov, M. S., Gutakovskii, A. K., Prosvirin, I. P., Dmitriev, D. V., Nedomolkina, A. A., & Valisheva, N. A. (2019). Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma. Materials Science in Semiconductor Processing, 102, [104611]. https://doi.org/10.1016/j.mssp.2019.104611

Vancouver

Aksenov MS, Gutakovskii AK, Prosvirin IP, Dmitriev DV, Nedomolkina AA, Valisheva NA. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma. Materials Science in Semiconductor Processing. 2019 Nov 1;102:104611. doi: 10.1016/j.mssp.2019.104611

Author

Aksenov, M. S. ; Gutakovskii, A. K. ; Prosvirin, I. P. et al. / Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma. In: Materials Science in Semiconductor Processing. 2019 ; Vol. 102.

BibTeX

@article{9589ff873c464867abaf9eab6b29baa9,
title = "Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma",
abstract = "The study of the InAlAs surface oxidation process in the Townsend gas-discharge plasma of gas-mixture Ar, O2, CF4 at room temperature was performed. The anodic layer thickness distribution, the morphology of InAlAs surface and anodic layer/InAlAs interface, as well as the layer chemical composition, were investigated by scanning ellipsometry, AFM, HREM and XPS methods. It was shown that the presented oxidation technique provides a controlled formation of non-fluorinated and fluorinated anodic layers on the InAlAs surface with a sharp interface and unchanged surface morphology. The non-fluorinated anodic layer mainly consists of semiconductor element oxides (In2O3, Al2O3, As2O3). The oxidation in the fluorine-containing medium leads to the formation of In, Al and As oxyfluorides.",
keywords = "OXIDATION, PASSIVATION, INSULATOR, OXIDES",
author = "Aksenov, {M. S.} and Gutakovskii, {A. K.} and Prosvirin, {I. P.} and Dmitriev, {D. V.} and Nedomolkina, {A. A.} and Valisheva, {N. A.}",
year = "2019",
month = nov,
day = "1",
doi = "10.1016/j.mssp.2019.104611",
language = "English",
volume = "102",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma

AU - Aksenov, M. S.

AU - Gutakovskii, A. K.

AU - Prosvirin, I. P.

AU - Dmitriev, D. V.

AU - Nedomolkina, A. A.

AU - Valisheva, N. A.

PY - 2019/11/1

Y1 - 2019/11/1

N2 - The study of the InAlAs surface oxidation process in the Townsend gas-discharge plasma of gas-mixture Ar, O2, CF4 at room temperature was performed. The anodic layer thickness distribution, the morphology of InAlAs surface and anodic layer/InAlAs interface, as well as the layer chemical composition, were investigated by scanning ellipsometry, AFM, HREM and XPS methods. It was shown that the presented oxidation technique provides a controlled formation of non-fluorinated and fluorinated anodic layers on the InAlAs surface with a sharp interface and unchanged surface morphology. The non-fluorinated anodic layer mainly consists of semiconductor element oxides (In2O3, Al2O3, As2O3). The oxidation in the fluorine-containing medium leads to the formation of In, Al and As oxyfluorides.

AB - The study of the InAlAs surface oxidation process in the Townsend gas-discharge plasma of gas-mixture Ar, O2, CF4 at room temperature was performed. The anodic layer thickness distribution, the morphology of InAlAs surface and anodic layer/InAlAs interface, as well as the layer chemical composition, were investigated by scanning ellipsometry, AFM, HREM and XPS methods. It was shown that the presented oxidation technique provides a controlled formation of non-fluorinated and fluorinated anodic layers on the InAlAs surface with a sharp interface and unchanged surface morphology. The non-fluorinated anodic layer mainly consists of semiconductor element oxides (In2O3, Al2O3, As2O3). The oxidation in the fluorine-containing medium leads to the formation of In, Al and As oxyfluorides.

KW - OXIDATION

KW - PASSIVATION

KW - INSULATOR

KW - OXIDES

UR - http://www.scopus.com/inward/record.url?scp=85068503263&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2019.104611

DO - 10.1016/j.mssp.2019.104611

M3 - Article

AN - SCOPUS:85068503263

VL - 102

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

M1 - 104611

ER -

ID: 20779348