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AlN/GaN heterostructures for normally-off transistors. / Zhuravlev, K. S.; Malin, T. V.; Mansurov, V. G. et al.

In: Semiconductors, Vol. 51, No. 3, 01.03.2017, p. 379-386.

Research output: Contribution to journal › Article › peer-review

Harvard

Zhuravlev, KS, Malin, TV, Mansurov, VG, Tereshenko, OE, Abgaryan, KK, Reviznikov, DL, Zemlyakov, VE, Egorkin, VI, Parnes, YM, Tikhomirov, VG & Prosvirin, IP 2017, 'AlN/GaN heterostructures for normally-off transistors', Semiconductors, vol. 51, no. 3, pp. 379-386. https://doi.org/10.1134/S1063782617030277

APA

Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Tereshenko, O. E., Abgaryan, K. K., Reviznikov, D. L., Zemlyakov, V. E., Egorkin, V. I., Parnes, Y. M., Tikhomirov, V. G., & Prosvirin, I. P. (2017). AlN/GaN heterostructures for normally-off transistors. Semiconductors, 51(3), 379-386. https://doi.org/10.1134/S1063782617030277

Vancouver

Zhuravlev KS, Malin TV, Mansurov VG, Tereshenko OE, Abgaryan KK, Reviznikov DL et al. AlN/GaN heterostructures for normally-off transistors. Semiconductors. 2017 Mar 1;51(3):379-386. doi: 10.1134/S1063782617030277

Author

Zhuravlev, K. S. ; Malin, T. V. ; Mansurov, V. G. et al. / AlN/GaN heterostructures for normally-off transistors. In: Semiconductors. 2017 ; Vol. 51, No. 3. pp. 379-386.

BibTeX

@article{b29d1e943493444bafa2568c950ebb7e,
title = "AlN/GaN heterostructures for normally-off transistors",
abstract = "The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.",
keywords = "ELECTRON-MOBILITY TRANSISTORS, ALGAN/GAN HETEROSTRUCTURES, HEMTS, ENHANCEMENT, MODE, VOLTAGE, F(T)",
author = "Zhuravlev, {K. S.} and Malin, {T. V.} and Mansurov, {V. G.} and Tereshenko, {O. E.} and Abgaryan, {K. K.} and Reviznikov, {D. L.} and Zemlyakov, {V. E.} and Egorkin, {V. I.} and Parnes, {Ya M.} and Tikhomirov, {V. G.} and Prosvirin, {I. P.}",
year = "2017",
month = mar,
day = "1",
doi = "10.1134/S1063782617030277",
language = "English",
volume = "51",
pages = "379--386",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - AlN/GaN heterostructures for normally-off transistors

AU - Zhuravlev, K. S.

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Tereshenko, O. E.

AU - Abgaryan, K. K.

AU - Reviznikov, D. L.

AU - Zemlyakov, V. E.

AU - Egorkin, V. I.

AU - Parnes, Ya M.

AU - Tikhomirov, V. G.

AU - Prosvirin, I. P.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

AB - The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

KW - ELECTRON-MOBILITY TRANSISTORS

KW - ALGAN/GAN HETEROSTRUCTURES

KW - HEMTS

KW - ENHANCEMENT

KW - MODE

KW - VOLTAGE

KW - F(T)

UR - http://www.scopus.com/inward/record.url?scp=85015624299&partnerID=8YFLogxK

U2 - 10.1134/S1063782617030277

DO - 10.1134/S1063782617030277

M3 - Article

AN - SCOPUS:85015624299

VL - 51

SP - 379

EP - 386

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 9562104