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About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts. / Aksenov, M. S.; Valisheva, N. A.; Chistokhin, I. B. et al.

In: Applied Physics Letters, Vol. 114, No. 22, 221602, 03.06.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Aksenov, MS, Valisheva, NA, Chistokhin, IB, Dmitriev, DV, Kozhukhov, AS & Zhuravlev, KS 2019, 'About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts', Applied Physics Letters, vol. 114, no. 22, 221602. https://doi.org/10.1063/1.5091598

APA

Aksenov, M. S., Valisheva, N. A., Chistokhin, I. B., Dmitriev, D. V., Kozhukhov, A. S., & Zhuravlev, K. S. (2019). About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts. Applied Physics Letters, 114(22), [221602]. https://doi.org/10.1063/1.5091598

Vancouver

Aksenov MS, Valisheva NA, Chistokhin IB, Dmitriev DV, Kozhukhov AS, Zhuravlev KS. About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts. Applied Physics Letters. 2019 Jun 3;114(22):221602. doi: 10.1063/1.5091598

Author

Aksenov, M. S. ; Valisheva, N. A. ; Chistokhin, I. B. et al. / About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts. In: Applied Physics Letters. 2019 ; Vol. 114, No. 22.

BibTeX

@article{e71b1f10dcb4484d91b7200a4427ead4,
title = "About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts",
abstract = "A correlation study of InAlAs surface morphology by atomic force microscopy and a study on the temperature (78-380 K) dependence of Au/Ti/InAlAs(001) Schottky barriers' current-voltage characteristics were performed. It is shown that a change in the growth structural defect (pit) density on the InAlAs surface from 106 to 107 cm-2 practically does not affect the current-voltage dependence at temperatures above 200 K that is well described by the thermionic emission theory with the ideality factor and the barrier height close to 1.1 and 0.69 eV, respectively. At the same time, change in the pit density has a significant effect on the Schottky barrier parameters at temperatures below 200 K, which can be explained by the Tung model suggesting the presence of local inhomogeneities with a lower barrier height and different total occupied areas. Also, the areas at the pit defect periphery that can lead to effective barrier height lowering after the Schottky contact formation were revealed by Kelvin probe force microscopy. Based on the obtained data, it can be concluded that the growth defects on the InAlAs surface shaped as pits cause areas in Schottky contact with a lower barrier height.",
keywords = "ELECTRON-TRANSPORT, DIODE, SEMICONDUCTOR, INTERFACE, HEIGHT",
author = "Aksenov, {M. S.} and Valisheva, {N. A.} and Chistokhin, {I. B.} and Dmitriev, {D. V.} and Kozhukhov, {A. S.} and Zhuravlev, {K. S.}",
note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",
year = "2019",
month = jun,
day = "3",
doi = "10.1063/1.5091598",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "22",

}

RIS

TY - JOUR

T1 - About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts

AU - Aksenov, M. S.

AU - Valisheva, N. A.

AU - Chistokhin, I. B.

AU - Dmitriev, D. V.

AU - Kozhukhov, A. S.

AU - Zhuravlev, K. S.

N1 - Publisher Copyright: © 2019 Author(s).

PY - 2019/6/3

Y1 - 2019/6/3

N2 - A correlation study of InAlAs surface morphology by atomic force microscopy and a study on the temperature (78-380 K) dependence of Au/Ti/InAlAs(001) Schottky barriers' current-voltage characteristics were performed. It is shown that a change in the growth structural defect (pit) density on the InAlAs surface from 106 to 107 cm-2 practically does not affect the current-voltage dependence at temperatures above 200 K that is well described by the thermionic emission theory with the ideality factor and the barrier height close to 1.1 and 0.69 eV, respectively. At the same time, change in the pit density has a significant effect on the Schottky barrier parameters at temperatures below 200 K, which can be explained by the Tung model suggesting the presence of local inhomogeneities with a lower barrier height and different total occupied areas. Also, the areas at the pit defect periphery that can lead to effective barrier height lowering after the Schottky contact formation were revealed by Kelvin probe force microscopy. Based on the obtained data, it can be concluded that the growth defects on the InAlAs surface shaped as pits cause areas in Schottky contact with a lower barrier height.

AB - A correlation study of InAlAs surface morphology by atomic force microscopy and a study on the temperature (78-380 K) dependence of Au/Ti/InAlAs(001) Schottky barriers' current-voltage characteristics were performed. It is shown that a change in the growth structural defect (pit) density on the InAlAs surface from 106 to 107 cm-2 practically does not affect the current-voltage dependence at temperatures above 200 K that is well described by the thermionic emission theory with the ideality factor and the barrier height close to 1.1 and 0.69 eV, respectively. At the same time, change in the pit density has a significant effect on the Schottky barrier parameters at temperatures below 200 K, which can be explained by the Tung model suggesting the presence of local inhomogeneities with a lower barrier height and different total occupied areas. Also, the areas at the pit defect periphery that can lead to effective barrier height lowering after the Schottky contact formation were revealed by Kelvin probe force microscopy. Based on the obtained data, it can be concluded that the growth defects on the InAlAs surface shaped as pits cause areas in Schottky contact with a lower barrier height.

KW - ELECTRON-TRANSPORT

KW - DIODE

KW - SEMICONDUCTOR

KW - INTERFACE

KW - HEIGHT

UR - http://www.scopus.com/inward/record.url?scp=85066832728&partnerID=8YFLogxK

U2 - 10.1063/1.5091598

DO - 10.1063/1.5091598

M3 - Article

AN - SCOPUS:85066832728

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 221602

ER -

ID: 20531955