Standard

A new approach to numerical simulation of charge transport in double Gate-MOSFET. / Blokhin, Alexander; Semisalov, Boris.

In: Applied Mathematics and Computation, Vol. 342, 01.02.2019, p. 206-223.

Research output: Contribution to journal › Article › peer-review

Harvard

Blokhin, A & Semisalov, B 2019, 'A new approach to numerical simulation of charge transport in double Gate-MOSFET', Applied Mathematics and Computation, vol. 342, pp. 206-223. https://doi.org/10.1016/j.amc.2018.09.030

APA

Blokhin, A., & Semisalov, B. (2019). A new approach to numerical simulation of charge transport in double Gate-MOSFET. Applied Mathematics and Computation, 342, 206-223. https://doi.org/10.1016/j.amc.2018.09.030

Vancouver

Blokhin A, Semisalov B. A new approach to numerical simulation of charge transport in double Gate-MOSFET. Applied Mathematics and Computation. 2019 Feb 1;342:206-223. doi: 10.1016/j.amc.2018.09.030

Author

Blokhin, Alexander ; Semisalov, Boris. / A new approach to numerical simulation of charge transport in double Gate-MOSFET. In: Applied Mathematics and Computation. 2019 ; Vol. 342. pp. 206-223.

BibTeX

@article{ea95bb1a3f6842c1a389ce27ab301b09,
title = "A new approach to numerical simulation of charge transport in double Gate-MOSFET",
abstract = "We propose and describe in detail an effective numerical algorithm for finding the stationary solution of charge transport problem in a DG-MOSFET. Hydrodynamical models describing the process of charge transport in semiconductors are sets of nonlinear PDE's with small parameters and specific conditions on the boundary of transistor that essentially complicates the process of numerical simulations. We construct a new algorithm based on the stabilization method and ideas of approximation without saturation and pseudo-spectral methods that enables one to overcome all of the mentioned difficulties. The proposed algorithm enables us to obtain the solution for different geometrical characteristics of DG-MOSFET and boundary conditions (including the non-symmetric cases) with extremely small values of dimensionless doping density and dielectric constant that are used in practice. (c) 2018 Elsevier Inc. All rights reserved.",
keywords = "Algorithm without saturation, DG-MOSFET, Hydrodynamical model, Numerical simulations, Pseudo-spectral method, Stabilization method, SILICON MESFET, SUBBAND MODEL, MOMENT EQUATIONS, PARABOLIC BAND TRANSPORT, CLOSURE, DISCRETIZATION, SEMICONDUCTOR-DEVICE, MAXIMUM-ENTROPY PRINCIPLE, HYDRODYNAMICAL MODEL, 2D SIMULATION",
author = "Alexander Blokhin and Boris Semisalov",
note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Inc.",
year = "2019",
month = feb,
day = "1",
doi = "10.1016/j.amc.2018.09.030",
language = "English",
volume = "342",
pages = "206--223",
journal = "Applied Mathematics and Computation",
issn = "0096-3003",
publisher = "Elsevier Science Inc.",

}

RIS

TY - JOUR

T1 - A new approach to numerical simulation of charge transport in double Gate-MOSFET

AU - Blokhin, Alexander

AU - Semisalov, Boris

N1 - Publisher Copyright: © 2018 Elsevier Inc.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - We propose and describe in detail an effective numerical algorithm for finding the stationary solution of charge transport problem in a DG-MOSFET. Hydrodynamical models describing the process of charge transport in semiconductors are sets of nonlinear PDE's with small parameters and specific conditions on the boundary of transistor that essentially complicates the process of numerical simulations. We construct a new algorithm based on the stabilization method and ideas of approximation without saturation and pseudo-spectral methods that enables one to overcome all of the mentioned difficulties. The proposed algorithm enables us to obtain the solution for different geometrical characteristics of DG-MOSFET and boundary conditions (including the non-symmetric cases) with extremely small values of dimensionless doping density and dielectric constant that are used in practice. (c) 2018 Elsevier Inc. All rights reserved.

AB - We propose and describe in detail an effective numerical algorithm for finding the stationary solution of charge transport problem in a DG-MOSFET. Hydrodynamical models describing the process of charge transport in semiconductors are sets of nonlinear PDE's with small parameters and specific conditions on the boundary of transistor that essentially complicates the process of numerical simulations. We construct a new algorithm based on the stabilization method and ideas of approximation without saturation and pseudo-spectral methods that enables one to overcome all of the mentioned difficulties. The proposed algorithm enables us to obtain the solution for different geometrical characteristics of DG-MOSFET and boundary conditions (including the non-symmetric cases) with extremely small values of dimensionless doping density and dielectric constant that are used in practice. (c) 2018 Elsevier Inc. All rights reserved.

KW - Algorithm without saturation

KW - DG-MOSFET

KW - Hydrodynamical model

KW - Numerical simulations

KW - Pseudo-spectral method

KW - Stabilization method

KW - SILICON MESFET

KW - SUBBAND MODEL

KW - MOMENT EQUATIONS

KW - PARABOLIC BAND TRANSPORT

KW - CLOSURE

KW - DISCRETIZATION

KW - SEMICONDUCTOR-DEVICE

KW - MAXIMUM-ENTROPY PRINCIPLE

KW - HYDRODYNAMICAL MODEL

KW - 2D SIMULATION

UR - http://www.scopus.com/inward/record.url?scp=85054312726&partnerID=8YFLogxK

U2 - 10.1016/j.amc.2018.09.030

DO - 10.1016/j.amc.2018.09.030

M3 - Article

AN - SCOPUS:85054312726

VL - 342

SP - 206

EP - 223

JO - Applied Mathematics and Computation

JF - Applied Mathematics and Computation

SN - 0096-3003

ER -

ID: 18069470