Original languageEnglish
Pages (from-to)206-223
Number of pages18
JournalApplied Mathematics and Computation
Volume342
DOIs
Publication statusPublished - 1 Feb 2019

    Research areas

  • Algorithm without saturation, DG-MOSFET, Hydrodynamical model, Numerical simulations, Pseudo-spectral method, Stabilization method, SILICON MESFET, SUBBAND MODEL, MOMENT EQUATIONS, PARABOLIC BAND TRANSPORT, CLOSURE, DISCRETIZATION, SEMICONDUCTOR-DEVICE, MAXIMUM-ENTROPY PRINCIPLE, HYDRODYNAMICAL MODEL, 2D SIMULATION

    OECD FOS+WOS

  • 1.01 MATHEMATICS

ID: 18069470