Research output: Contribution to journal › Article › peer-review
| Translated title of the contribution | Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions |
|---|---|
| Original language | Russian |
| Article number | 1 |
| Pages (from-to) | 217-223 |
| Number of pages | 7 |
| Journal | Физика и техника полупроводников |
| Volume | 55 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2021 |
ID: 28503438