1 - 1 out of 1Page size: 10
  1. 2025

  2. Mathematical Modeling of Charge Transport in the Dielectric Layer of a HfOx Memristor Taking into Account Single Charged Traps

    Islamov, D. R., Zalyalov, T. M., Voronkovskii, V. A., Markelova, A. K., Pil’nik, A. A., Perevalov, T. V., Davydov, M. N. & Chernov, A. A., Dec 2025, In: Russian Microelectronics. 54, 8, p. 922-928 7 p.

    Research output: Contribution to journal › Article › peer-review

ID: 68125486