1. Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells

    Dobretsova, A. A., Kvon, Z. D., Braginskii, L. S., Entin, M. V. & Mikhailov, N. N., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1468-1472 5 p.

    Research output: Contribution to journalArticlepeer-review

  2. Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor

    Jaroshevich, A. S., Tkachenko, V. A., Kvon, Z. D., Kuzmin, N. S., Tkachenko, O. A., Baksheev, D. G., Marchishin, I. V., Bakarov, A. K., Rodyakina, E. E., Antonov, V. A., Popov, V. P. & Latyshev, A. V., Sept 2024, In: Bulletin of the Russian Academy of Sciences: Physics. 88, 9, p. 1505-1512 8 p.

    Research output: Contribution to journalArticlepeer-review

  3. Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 116, 2, (83-89), 10.1134/S0021364022601208)

    Semenin, N. V., Borisenko, A. S., Zalivako, I. V., Semerikov, I. A., Aksenov, M. D., Khabarova, K. Y., Kolachevsky, N. N., Glazyrin, S. I., Lykov, V. A., Karpov, S. A., Karlykhanov, N. G., Gryaznykh, D. A., Bychenkov, V. Y., Karelina, L. N., Shuravin, N. S., Ionin, A. S., Bakurskiy, S. V., Egorov, S. V., Golovchanskiy, I. A., Chichkov, V. I., & 6 othersBol’ginov, V. V., Ryazanov, V. V., Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A. & Kvon, Z. D., 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journalArticlepeer-review

  4. ERRATUM TO: SEVERAL ARTICLES IN JETP LETTERS

    Казанцев, Д. М., Альперович, В. Л., Ткаченко, В. А. & Квон, З. Д., Dec 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journalComment/debatepeer-review

  5. Erratum to: Several Articles in JETP Letters

    Рыжков, М. С., Худайбердиев, Д. А., Козлов, Д. А., Квон, З. Д., Михайлов, Н. Н. & Dvoretsky, S. A., Nov 2022, In: JETP Letters. 116, 9, p. 655-656 2 p.

    Research output: Contribution to journalComment/debatepeer-review

  6. Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 115, 4, (181-185), 10.1134/S0021364022040105)

    Sazonova, S. V., Ageev, E. I., Iudin, V. A., Sun, Y., Petrova, E. A., Kustov, P. N., Yaroshenko, V. V., Mikhailova, J. V., Gudovskikh, A. S., Mukhin, I. S., Zuev, D. A., Ryzhkov, M. S., Khudaiberdiev, D. A., Kozlov, D. A., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Dolganov, P. V., Dolganov, V. K., Kats, E. I., & 8 othersSakhin, V., Kukovitsky, E., Talanov, Y., Teitel’baum, G., Morgun, L., Borisov, A., Usoltsev, A. & Pudalov, V., Nov 2022, In: JETP Letters. 116, 9, p. 655-656 2 p.

    Research output: Contribution to journalComment/debatepeer-review

  7. Energy spectrum of semimetallic HgTe quantum wells

    Gospodarič, J., Shuvaev, A., Mikhailov, N. N., Kvon, Z. D., Novik, E. G. & Pimenov, A., 15 Sept 2021, In: Physical Review B. 104, 11, 115307.

    Research output: Contribution to journalArticlepeer-review

  8. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators

    Rahim, A., Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Mikhailov, N. N. & Dvoretsky, S. A., 1 Feb 2019, In: Microelectronic Engineering. 206, p. 55-59 5 p.

    Research output: Contribution to journalArticlepeer-review

  9. Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well

    Gusev, G. M., Kvon, Z. D., Levin, A. D., Olshanetsky, E. B., Raichev, O. E., Mikhailov, N. N. & Dvoretsky, S. A., 29 Jan 2019, In: Scientific Reports. 9, 1, p. 831 7 p., 831.

    Research output: Contribution to journalArticlepeer-review

  10. Edge states in lateral p-n junctions in inverted-band HgTe quantum wells

    Piatrusha, S. U., Khrapai, V. S., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Tikhonov, E. S., 20 Dec 2017, In: Physical Review B. 96, 24, 10 p., 245417.

    Research output: Contribution to journalArticlepeer-review

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