1. 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate

    Feklistov, K. V., Lemzyakov, A. G., Abramkin, D. S., Svit, K. A., Pugachev, A. M., Volodin, V. A., Marin, D. V., Spesivsev, E. V., Azarov, I. A., Safronov, L. N., Kochubey, S. A., Ershov, K. S., Kapishnikov, A. V., Shmakov, A. N., Shklyaev, A. A. & Zhivodkov, Y. A., 30 Jun 2026, In: Modern Electronic Materials. 12, 2, p. 95-102 8 p.

    Research output: Contribution to journal › Article › peer-review

  2. Antireflection microstructures fabricated on the surface of a LiGaSe 2 nonlinear crystal

    Teslenko, A. A., Bushunov, A. A., Isaenko, L. I., Shklyaev, A., Goloshumova, A., Lobanov, S. I., Lazarev, V. A. & Tarabrin, M. K., 1 Mar 2023, In: Optics Letters. 48, 5, p. 1196-1199 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. Atomic structure of high Miller index Si(47 35 7) surface

    Zhachuk, R. A., Dolbak, A. E. & Shklyaev, A. A., Mar 2020, In: Surface Science. 693, 5 p., 121549.

    Research output: Contribution to journal › Article › peer-review

  4. Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles

    Utkin, D. E., Tsarev, A. V., Utkin, E. N., Latyshev, A. V. & Shklyaev, A. A., 1 Sept 2021, In: Optoelectronics, Instrumentation and Data Processing. 57, 5, p. 494-504 11 p.

    Research output: Contribution to journal › Article › peer-review

  5. Broadband Antireflection Coatings Made of Resonant Submicron- And Micron-Sized SiGe Particles Grown on Si Substrates

    Shklyaev, A. A. & Tsarev, A. V., Jun 2021, In: IEEE Photonics Journal. 13, 3, 9435026.

    Research output: Contribution to journal › Article › peer-review

  6. Coatings consisting of Ge particles on nonwettable Si oxide surfaces and their resonance reflection spectra

    Shklyaev, A. A., 1 Mar 2023, In: Thin Solid Films. 768, 139720.

    Research output: Contribution to journal › Article › peer-review

  7. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures

    Shklyaev, A. A. & Budazhapova, A. E., 1 Jan 2017, In: Materials Science in Semiconductor Processing. 57, p. 18-23 6 p.

    Research output: Contribution to journal › Article › peer-review

  8. Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 4 Jan 2021, In: Applied Physics Letters. 118, 1, 5 p., 012104.

    Research output: Contribution to journal › Article › peer-review

  9. Dependence of light reflection of germanium Mie nanoresonators on their aspect ratio

    Utkin, D. E., Anikin, K. V., Veber, S. L. & Shklyaev, A. A., Nov 2020, In: Optical Materials. 109, 5 p., 110466.

    Research output: Contribution to journal › Article › peer-review

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