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  1. Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces

    Khoroshilov, V. S., Kazantsev, D. M., Alperovich, V. L., Coupeau, C. & Drouet, M., 28 Mar 2022, In: Journal of Physics: Conference Series. 2227, 1, 012008.

    Research output: Contribution to journal › Conference article › peer-review

  2. ERRATUM TO: SEVERAL ARTICLES IN JETP LETTERS

    Казанцев, Д. М., Альперович, В. Л., Ткаченко, В. А. & Квон, З. Д., Dec 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  3. Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 116, 2, (83-89), 10.1134/S0021364022601208)

    Semenin, N. V., Borisenko, A. S., Zalivako, I. V., Semerikov, I. A., Aksenov, M. D., Khabarova, K. Y., Kolachevsky, N. N., Glazyrin, S. I., Lykov, V. A., Karpov, S. A., Karlykhanov, N. G., Gryaznykh, D. A., Bychenkov, V. Y., Karelina, L. N., Shuravin, N. S., Ionin, A. S., Bakurskiy, S. V., Egorov, S. V., Golovchanskiy, I. A., Chichkov, V. I., & 6 othersBol’ginov, V. V., Ryazanov, V. V., Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A. & Kvon, Z. D., 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journal › Article › peer-review

  4. Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling

    Khoroshilov, V. S., Kazantsev, D. M. & Zhuravlev, A. G., 20 Dec 2019, In: Journal of Physics: Conference Series. 1410, 1, 012128.

    Research output: Contribution to journal › Conference article › peer-review

  5. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

    Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 255-277 23 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  6. Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

    Kazantsev, D. M., Akhundov, I. O., Kozhuhov, A. S., Khoroshilov, V. S., Shwartz, N. L., Alperovich, V. L. & Latyshev, A. V., 1 Mar 2023, In: Physica Scripta. 98, 3, 035702.

    Research output: Contribution to journal › Article › peer-review

  7. Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces

    Coupeau, C., Kazantsev, D. M., Drouet, M. & Alperovich, V. L., 15 Aug 2019, In: Acta Materialia. 175, p. 206-213 8 p.

    Research output: Contribution to journal › Article › peer-review

  8. Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

    Akhundov, I. O., Kazantsev, D. M., Alperovich, V. L., Sheglov, D. V., Kozhukhov, A. S. & Latyshev, A. V., 1 Jun 2017, In: Applied Surface Science. 406, p. 307-311 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Monte Carlo simulation of roughening at step-terraced surfaces

    Kazantsev, D. M., Shwartz, N. L. & Alperovich, V. L., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012010.

    Research output: Contribution to journal › Conference article › peer-review

  10. Optimization of conditions for thermal smoothing GaAs surfaces

    Akhundov, I. O., Kazantsev, D. M., Kozhuhov, A. S. & Alperovich, V. L., 10 Apr 2018, In: Journal of Physics: Conference Series. 993, 1, 6 p., 012010.

    Research output: Contribution to journal › Conference article › peer-review

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