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  1. 2018

  2. Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots

    Bloshkin, A. A., Yakimov, A. I., Zinovieva, A. F., Zinoviev, V. A. & Dvurechenskii, A. V., Mar 2018, In: Journal of Surface Investigation. 12, 2, p. 306-316 11 p.

    Research output: Contribution to journal › Article › peer-review

  3. Enhanced optical properties of silicon based quantum dot heterostructures

    Dvurechenskii, A., Yakimov, A., Kirienko, V., Bloshkin, A., Zinovyev, V., Zinovieva, A. & Mudryi, A., 1 Jan 2018, Physics and Technology of Nanostructured Materials. Trans Tech Publications Ltd, Vol. 386 DDF. p. 68-74 7 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  4. 2017

  5. Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands

    Novikov, P. L., Atovullaev, T., Smagina, Z. V., Dvurechenskii, A. V. & Pavskii, K. V., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 4 p., 1700200.

    Research output: Contribution to journal › Article › peer-review

  6. Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

    Dvurechenskii, A., Zinovieva, A., Zinovyev, V., Nenashev, A., Smagina, Z., Teys, S., Shklyaev, A., Erenburg, S., Trubina, S., Borodavchenko, O., Zhivulko, V. & Mudryi, A., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 6 p., 1700187.

    Research output: Contribution to journal › Article › peer-review

  7. Field dependence of hopping mobility: Lattice models against spatial disorder

    Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Nov 2017, In: Physical Review B. 96, 19, 9 p., 195208.

    Research output: Contribution to journal › Article › peer-review

  8. Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

    Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A. & Dvurechenskii, A. V., 7 Oct 2017, In: Journal of Applied Physics. 122, 13, 7 p., 133101.

    Research output: Contribution to journal › Article › peer-review

  9. Hall effect in hopping conduction in an ensemble of quantum dots

    Stepina, N. P., Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2017, In: JETP Letters. 106, 5, p. 308-312 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

  11. Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns

    Stepina, N. P., Zinovieva, A. F., Dvurechenskii, A. V., Noda, S., Molla, M. Z. & Samukawa, S., 15 May 2017, In: Applied Physics Letters. 110, 20, 4 p., 203103.

    Research output: Contribution to journal › Article › peer-review

  12. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

    Yakimov, A. I., Kirienko, V. V., Armbrister, V. A. & Dvurechenskii, A. V., 1 Apr 2017, In: JETP Letters. 105, 7, p. 426-429 4 p.

    Research output: Contribution to journal › Article › peer-review

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