41 - 60 out of 78Page size: 20
  1. 2020

  2. Simulation of Plasmon Enhanced Radiation from SiGe Quantum Dots Combined with Silver Nanoparticles

    Polovnikov, N. A., Zinovyev, V. A. & Dvurechenskii, A. V., Jun 2020, 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, p. 72-75 4 p. 9153345. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2020-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  3. Variational method of energy level calculation in pyramidal quantum dots

    Nenashev, A. V. & Dvurechenskii, A. V., 21 Apr 2020, In: Journal of Applied Physics. 127, 15, 8 p., 154301.

    Research output: Contribution to journal › Article › peer-review

  4. Magnetic properties of granulated SiCxNy: Fe films with different structure of alpha-Fe nanoclusters

    Stepina, N. P., Pushkarev, R. V., Zinovieva, A. F., Kirienko, V. V., Bogomyakov, A. S., Gutakovskii, A. K., Fainer, N. I. & Dvurechenskii, A. V., 1 Apr 2020, In: Journal of Magnetism and Magnetic Materials. 499, 5 p., 166242.

    Research output: Contribution to journal › Article › peer-review

  5. Semiconductor nanostructures for modern electronics

    Aseev, A. L., Latyshev, A. V. & Dvurechenskii, A. V., 2020, Advanced Research in Materials Science III. Davaasambuu, J. (ed.). Trans Tech Publications Ltd, p. 65-80 16 p. (Solid State Phenomena; vol. 310 SSP).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  6. 2019

  7. Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

    Smagina, Z. V., Zinovyev, V. A., Rodyakina, E. E., Fomin, B. I., Stepikhova, M. V., Yablonskiy, A. N., Gusev, S. A., Novikov, A. V. & Dvurechenskii, A. V., 1 Oct 2019, In: Semiconductors. 53, 10, p. 1329-1333 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots - Molecular Dynamics Calculations Using High-Efficiency Algorithms

    Novikov, P. L., Dvurechenskii, A. V. & Pavsky, K. V., Oct 2019, 2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019. Institute of Electrical and Electronics Engineers Inc., 8934013. (2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  9. Percolation description of charge transport in amorphous oxide semiconductors

    Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 12 Sept 2019, In: Physical Review B. 100, 12, 8 p., 125202.

    Research output: Contribution to journal › Article › peer-review

  10. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

    Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V. & Gebhard, F., 1 Sept 2019, In: EPL. 127, 5, 5 p., 57004.

    Research output: Contribution to journal › Article › peer-review

  11. Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range

    Yakimov, A. I., Bloshkin, A. A. & Dvurechenskii, A. V., 1 Sept 2019, In: JETP Letters. 110, 6, p. 411-416 6 p.

    Research output: Contribution to journal › Article › peer-review

  12. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 22 Mar 2019, In: Physical Review B. 99, 11, 9 p., 115314.

    Research output: Contribution to journal › Article › peer-review

  13. Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Stepina, N. P., Katsuba, A. V., Dvurechenskii, A. V., Gutakovskii, A. K., Kulik, L. V., Bogomyakov, A. S., Erenburg, S. B., Trubina, S. V. & Voelskow, M., 1 Feb 2019, In: JETP Letters. 109, 4, p. 270-275 6 p.

    Research output: Contribution to journal › Article › peer-review

  14. Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

    Bloshkin, A. A., Yakimov, A. I. & Dvurechenskii, A. V., 1 Feb 2019, In: Semiconductors. 53, 2, p. 195-199 5 p.

    Research output: Contribution to journal › Article › peer-review

  15. 2018

  16. Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

    Zinovyev, V. A., Zinovieva, A. F., Katsuba, A. V., Smagina, Z. V., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 1 Dec 2018, In: Semiconductors. 52, 16, p. 2149-2152 4 p.

    Research output: Contribution to journal › Article › peer-review

  17. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

    Rudin, S. A., Smagina, Z. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E. & Dvurechenskii, A. V., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1457-1461 5 p.

    Research output: Contribution to journal › Article › peer-review

  18. Release of carriers from traps enhanced by hopping

    Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F. & Baranovskii, S. D., 30 Oct 2018, In: Physical Review B. 98, 15, 10 p., 155207.

    Research output: Contribution to journal › Article › peer-review

  19. Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

    Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2018, In: Physics of the Solid State. 60, 9, p. 1807-1812 6 p.

    Research output: Contribution to journal › Article › peer-review

  20. Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

    Smagina, Z. V., Zinovyev, V. A., Krivyakin, G. K., Rodyakina, E. E., Kuchinskaya, P. A., Fomin, B. I., Yablonskiy, A. N., Stepikhova, M. V., Novikov, A. V. & Dvurechenskii, A. V., 1 Sept 2018, In: Semiconductors. 52, 9, p. 1150-1155 6 p.

    Research output: Contribution to journal › Article › peer-review

  21. Field-enhanced mobility in the multiple-trapping regime

    Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A. & Baranovskii, S. D., 3 Jul 2018, In: Physical Review B. 98, 3, 8 p., 035201.

    Research output: Contribution to journal › Article › peer-review

  22. Quantum Gates with Spin States in Continuous Microwave Field

    Zinovieva, A. F., Nenashev, A. V., Koshkarev, A. A., Zarodnyuk, T. S., Gornov, A. Y. & Dvurechenskii, A. V., 1 Jul 2018, In: Russian Microelectronics. 47, 4, p. 268-278 11 p.

    Research output: Contribution to journal › Article › peer-review

  23. Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

    Smagina, Z. V., Zinovyev, V. A., Rudin, S. A., Novikov, P. L., Rodyakina, E. E. & Dvurechenskii, A. V., 28 Apr 2018, In: Journal of Applied Physics. 123, 16, 5 p., 165302.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 3 4 Next

ID: 3442376