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  1. 2018

  2. Field-enhanced mobility in the multiple-trapping regime

    Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A. & Baranovskii, S. D., 3 Jul 2018, In: Physical Review B. 98, 3, 8 p., 035201.

    Research output: Contribution to journal › Article › peer-review

  3. Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

    Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2018, In: Physics of the Solid State. 60, 9, p. 1807-1812 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

    Smagina, Z. V., Zinovyev, V. A., Krivyakin, G. K., Rodyakina, E. E., Kuchinskaya, P. A., Fomin, B. I., Yablonskiy, A. N., Stepikhova, M. V., Novikov, A. V. & Dvurechenskii, A. V., 1 Sept 2018, In: Semiconductors. 52, 9, p. 1150-1155 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. Release of carriers from traps enhanced by hopping

    Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F. & Baranovskii, S. D., 30 Oct 2018, In: Physical Review B. 98, 15, 10 p., 155207.

    Research output: Contribution to journal › Article › peer-review

  6. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

    Rudin, S. A., Smagina, Z. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E. & Dvurechenskii, A. V., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1457-1461 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

    Zinovyev, V. A., Zinovieva, A. F., Katsuba, A. V., Smagina, Z. V., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 1 Dec 2018, In: Semiconductors. 52, 16, p. 2149-2152 4 p.

    Research output: Contribution to journal › Article › peer-review

  8. 2019

  9. Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Stepina, N. P., Katsuba, A. V., Dvurechenskii, A. V., Gutakovskii, A. K., Kulik, L. V., Bogomyakov, A. S., Erenburg, S. B., Trubina, S. V. & Voelskow, M., 1 Feb 2019, In: JETP Letters. 109, 4, p. 270-275 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

    Bloshkin, A. A., Yakimov, A. I. & Dvurechenskii, A. V., 1 Feb 2019, In: Semiconductors. 53, 2, p. 195-199 5 p.

    Research output: Contribution to journal › Article › peer-review

  11. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 22 Mar 2019, In: Physical Review B. 99, 11, 9 p., 115314.

    Research output: Contribution to journal › Article › peer-review

  12. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

    Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V. & Gebhard, F., 1 Sept 2019, In: EPL. 127, 5, 5 p., 57004.

    Research output: Contribution to journal › Article › peer-review

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