TY - JOUR

T1 - Weak Antilocalization in a Strongly Disordered Two-Dimensional Semimetal in an HgTe Quantum Well

AU - Olshanetsky, E. B.

AU - Kvon, Z. D.

AU - Mikhailov, N. N.

N1 - The study was supported by the Ministry of Science and Higher Education of the Russian Federation.

PY - 2024/2

Y1 - 2024/2

N2 - Weak localization in a highly disordered quantum well CdxHg1 – xTe/HgTe/CdxHg1 – xTe with a thickness of d = 20 nm is experimentally investigated. An analysis is made of the anomalous positive magnetoresistance (APM) caused by the suppression of the interference correction to the conductivity by a magnetic field on both sides of the charge neutrality point: for a two-dimensional semimetal and for a two-dimensional electronic metal. For the same values of resistivity, the APM peak in a 2D semimetal has a much wider width than in a 2D electron gas. A quantitative comparison of the obtained results with the theory allows, in particular, to conclude that the intensity of carrier transitions between subsystems in the 2D semimetal binary system is maximum near the charge neutrality point, where the concentrations of electrons and holes are close, and decreases as the difference in concentrations increases.

AB - Weak localization in a highly disordered quantum well CdxHg1 – xTe/HgTe/CdxHg1 – xTe with a thickness of d = 20 nm is experimentally investigated. An analysis is made of the anomalous positive magnetoresistance (APM) caused by the suppression of the interference correction to the conductivity by a magnetic field on both sides of the charge neutrality point: for a two-dimensional semimetal and for a two-dimensional electronic metal. For the same values of resistivity, the APM peak in a 2D semimetal has a much wider width than in a 2D electron gas. A quantitative comparison of the obtained results with the theory allows, in particular, to conclude that the intensity of carrier transitions between subsystems in the 2D semimetal binary system is maximum near the charge neutrality point, where the concentrations of electrons and holes are close, and decreases as the difference in concentrations increases.

KW - HgTe

KW - quantum well

KW - semimetal

KW - weak antilocalization

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85202950479&origin=inward&txGid=711c97b25c61cc876512edc4fa50a6ce

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001304089500005

UR - https://www.mendeley.com/catalogue/7c9fbf52-74d4-3d89-9bc1-0992bf65504c/

U2 - 10.1134/S1063782624020118

DO - 10.1134/S1063782624020118

M3 - Article

VL - 58

SP - 155

EP - 162

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -