TY - JOUR

T1 - Visible Photoluminescence of SiO Films Implanted with In and As Ions

AU - Tyschenko, I. E.

AU - Si, Zh

AU - Cherkova, S. G.

AU - Popov, V. P.

N1 - This study was supported by the Russian Federation Ministry of Science and Higher Education (project no. FWGW-2021-0003).

PY - 2024/2

Y1 - 2024/2

N2 - Visible photoluminescence from SiO films implanted with In and As ions was studied at room temperature depending on the energy of As ions, the temperature of further annealing, and the exciting radiation wavelength. As ions with energies of 40, 80, or 135 keV and In ions with an energy of 50 keV, at which the ratio between the average projective ranges of ions was 1, 2, and 3, respectively, were selected. Further annealing was performed at a temperature of 900 and 1100C. Photoluminescence spectra were excited with laser radiation with wavelengths and 473 nm. The spectra of photoluminescence under excitation with nm had a peak at 550 nm, whose energy position was shifted to nm at nm. An increase in the ratio was accompanied by a decrease in the photoluminescence intensity and a change in the ratio between the intensities of peaks depending on the annealing temperature. The observed effect was discussed from the viewpoint of recombination between electrons and holes in InAs nanocrystals.

AB - Visible photoluminescence from SiO films implanted with In and As ions was studied at room temperature depending on the energy of As ions, the temperature of further annealing, and the exciting radiation wavelength. As ions with energies of 40, 80, or 135 keV and In ions with an energy of 50 keV, at which the ratio between the average projective ranges of ions was 1, 2, and 3, respectively, were selected. Further annealing was performed at a temperature of 900 and 1100C. Photoluminescence spectra were excited with laser radiation with wavelengths and 473 nm. The spectra of photoluminescence under excitation with nm had a peak at 550 nm, whose energy position was shifted to nm at nm. An increase in the ratio was accompanied by a decrease in the photoluminescence intensity and a change in the ratio between the intensities of peaks depending on the annealing temperature. The observed effect was discussed from the viewpoint of recombination between electrons and holes in InAs nanocrystals.

KW - InAs

KW - SiO

KW - ion implantation

KW - nanocrystals

KW - photoluminescence

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85196498987&origin=inward&txGid=9e621afded6c454f0db5dbdd4e4a678f

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001252032700019

UR - https://www.mendeley.com/catalogue/72e2a684-7272-39a1-821a-619008c6f973/

U2 - 10.3103/S8756699024700067

DO - 10.3103/S8756699024700067

M3 - Article

VL - 60

SP - 93

EP - 98

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 1

ER -