Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Van der Waals Heteroepitaxial Growth of Layered SnSe2 on Surfaces Si(111) and Bi2Se3 (0001). / Ponomarev, S. A.; Zakhozhev, K. E.; Rogilo, D. I. и др.
в: Optoelectronics, Instrumentation and Data Processing, Том 58, № 6, 2022, стр. 564-570.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Van der Waals Heteroepitaxial Growth of Layered SnSe2 on Surfaces Si(111) and Bi2Se3 (0001)
AU - Ponomarev, S. A.
AU - Zakhozhev, K. E.
AU - Rogilo, D. I.
AU - Kurus’, N. N.
AU - Sheglov, D. V.
AU - Milekhin, A. G.
AU - Latyshev, A. V.
N1 - Публикация для коррекции
PY - 2022
Y1 - 2022
N2 - Layered SnSe2 films of nearly 50 and 30 nm in thickness were grown on Si(111) and Bi2Se3(0001) substrates, respectively, with the use of in situ reflection electron microscopy. In both cases, the growth of films occurred by a multilayer mechanism with the formation of pronounced hills. The height of atomic steps was measured by atomic force microscopy (AFM) as 0.6 nm, which corresponded to the SnSe2 layer thickness. The surface ex situ AFM image of SnSe2 grown on a Si(111) substrate demonstrated a high concentration of screw dislocations in the film (Formula presented.) and the existence of domains with a triangular faceting of steps, which had three types of orientation with respect to the substrate. The growth of a SnSe2 film on single crystal Bi2Se3 surface(0001) was revealed to occur with the formation of hills, which had a hexangular faceting and were identically oriented with respect to the substrate. The hills were formed by the multilayer mechanism both in the regions, where screw dislocations cropped out, and due to the periodic nucleation of 2D islands on the highest terraces, which attained 1 μm in size. Using Raman scattering, the films on both substrates were shown to have the spectra typical for the 1T-SnSe2 phase.
AB - Layered SnSe2 films of nearly 50 and 30 nm in thickness were grown on Si(111) and Bi2Se3(0001) substrates, respectively, with the use of in situ reflection electron microscopy. In both cases, the growth of films occurred by a multilayer mechanism with the formation of pronounced hills. The height of atomic steps was measured by atomic force microscopy (AFM) as 0.6 nm, which corresponded to the SnSe2 layer thickness. The surface ex situ AFM image of SnSe2 grown on a Si(111) substrate demonstrated a high concentration of screw dislocations in the film (Formula presented.) and the existence of domains with a triangular faceting of steps, which had three types of orientation with respect to the substrate. The growth of a SnSe2 film on single crystal Bi2Se3 surface(0001) was revealed to occur with the formation of hills, which had a hexangular faceting and were identically oriented with respect to the substrate. The hills were formed by the multilayer mechanism both in the regions, where screw dislocations cropped out, and due to the periodic nucleation of 2D islands on the highest terraces, which attained 1 μm in size. Using Raman scattering, the films on both substrates were shown to have the spectra typical for the 1T-SnSe2 phase.
KW - Bi2Se3
KW - SnSe2
KW - metal chalcogenides
KW - selenium
KW - silicon
KW - surface
KW - van der Waals epitaxy
UR - https://www.mendeley.com/catalogue/d9341456-5b15-38f5-954c-41ce546d02ed/
U2 - 10.3103/S8756699022060097
DO - 10.3103/S8756699022060097
M3 - Article
VL - 58
SP - 564
EP - 570
JO - Optoelectronics, Instrumentation and Data Processing
JF - Optoelectronics, Instrumentation and Data Processing
SN - 8756-6990
IS - 6
ER -
ID: 55694155