Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions. / Senkovskiy, Boris V.; Nenashev, Alexey V.; Alavi, Seyed K. и др.
в: Nature Communications, Том 12, № 1, 2542, 01.12.2021, стр. 2542.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions
AU - Senkovskiy, Boris V.
AU - Nenashev, Alexey V.
AU - Alavi, Seyed K.
AU - Falke, Yannic
AU - Hell, Martin
AU - Bampoulis, Pantelis
AU - Rybkovskiy, Dmitry V.
AU - Usachov, Dmitry Yu
AU - Fedorov, Alexander V.
AU - Chernov, Alexander I.
AU - Gebhard, Florian
AU - Meerholz, Klaus
AU - Hertel, Dirk
AU - Arita, Masashi
AU - Okuda, Taichi
AU - Miyamoto, Koji
AU - Shimada, Kenya
AU - Fischer, Felix R.
AU - Michely, Thomas
AU - Baranovskii, Sergei D.
AU - Lindfors, Klas
AU - Szkopek, Thomas
AU - Grüneis, Alexander
N1 - Funding Information: B.V.S., Y.F., and A.G. acknowledge the ERC-grant no. 648589 “SUPER-2D.” A.G. and K.L. acknowledge DFG projects GR 3708/4-1 and LI 2633/5-1. T.S. acknowledges support from “Quantum Matter and Materials” for a long-time stay in Cologne. A.V.N. acknowledges financial support from the Russian Foundation for Basic Research (project 20-52-00016 Bel-a). S.K.A. acknowledges Bonn Cologne Graduate School (BCGS) of Physics and Astronomy and DAAD for financial support. K.L. and S.K.A. acknowledge a grant from the Volkswagen Foundation. We thank Professor Yoichi Ando for support of the nanos-tructuring. P.B. acknowledges financial support from the Alexander von Humboldt foundation. D.V.R. acknowledges support from Russian Ministry of Science and Higher Education (Grant No. 2711.2020.2 to leading scientific schools). D.Y.U. acknowledges Saint Petersburg State University (Grant No. ID 73028629). We acknowledge the Hiroshima Synchrotron Radiation Facility for providing access to its facilities (proposal 17BG018). We also acknowledge HZB BESSY II for the provision of synchrotron radiation. A.I.C. acknowledges support by the Alexander-von-Humboldt-Stiftung. Research is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award DE-SC0010409 (design, synthesis, and characterization of molecular precursors). Publisher Copyright: © 2021, The Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/12/1
Y1 - 2021/12/1
N2 - Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.
AB - Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.
UR - http://www.scopus.com/inward/record.url?scp=85105347745&partnerID=8YFLogxK
U2 - 10.1038/s41467-021-22774-0
DO - 10.1038/s41467-021-22774-0
M3 - Article
C2 - 33953174
AN - SCOPUS:85105347745
VL - 12
SP - 2542
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
IS - 1
M1 - 2542
ER -
ID: 28555653