Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

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Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands. / Rudin, S. A.; Zinovyev, V. A.; Smagina, Zh V. и др.

в: Journal of Applied Physics, Том 131, № 3, 035302, 21.01.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Rudin, S. A. ; Zinovyev, V. A. ; Smagina, Zh V. и др. / Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands. в: Journal of Applied Physics. 2022 ; Том 131, № 3.

BibTeX

@article{292c6c75ccc04339ae26104fec3e7e4f,

title = "Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands",

abstract = "Arrays of Ge quantum dot molecules were grown by molecular beam epitaxy using a template, composed of a multilayer structure with layers of vertically aligned three-dimensional (3D) Ge islands buried in an Si crystal matrix with the Si capping layer on top. Depending on preparation conditions, the molecules assume various configurations, including a square frame with [001]-[010]-oriented sides. It was shown by scanning tunneling microscopy that the 3D islands are located closer to the buried SiGe mound centers with the increase of the capping layer thickness. The mechanism of the quantum dot molecule formation is ascribed to strain relaxation. It was confirmed by Monte Carlo simulations of heteroepitaxial Ge growth on the template, containing the buried Ge mound. ",

author = "Rudin, {S. A.} and Zinovyev, {V. A.} and Smagina, {Zh V.} and Novikov, {P. L.} and Shklyaev, {A. A.} and Dvurechenskii, {A. V.}",

note = "This work was carried out under the state contract with ISP SB RAS. The experiments were partly carried out using the equipment of and supported by CKP {"}NANOSTRUKTURY{"} and CKP {"}VTAN{"} in the ATRC department of NSU. The authors thank A. K. Gutakovsky for TEM experiments. Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = jan,

day = "21",

doi = "10.1063/5.0075991",

language = "English",

volume = "131",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AMER INST PHYSICS",

number = "3",

}

RIS

TY - JOUR

T1 - Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

AU - Rudin, S. A.

AU - Zinovyev, V. A.

AU - Smagina, Zh V.

AU - Novikov, P. L.

AU - Shklyaev, A. A.

AU - Dvurechenskii, A. V.

N1 - This work was carried out under the state contract with ISP SB RAS. The experiments were partly carried out using the equipment of and supported by CKP "NANOSTRUKTURY" and CKP "VTAN" in the ATRC department of NSU. The authors thank A. K. Gutakovsky for TEM experiments. Publisher Copyright: © 2022 Author(s).

PY - 2022/1/21

Y1 - 2022/1/21

N2 - Arrays of Ge quantum dot molecules were grown by molecular beam epitaxy using a template, composed of a multilayer structure with layers of vertically aligned three-dimensional (3D) Ge islands buried in an Si crystal matrix with the Si capping layer on top. Depending on preparation conditions, the molecules assume various configurations, including a square frame with [001]-[010]-oriented sides. It was shown by scanning tunneling microscopy that the 3D islands are located closer to the buried SiGe mound centers with the increase of the capping layer thickness. The mechanism of the quantum dot molecule formation is ascribed to strain relaxation. It was confirmed by Monte Carlo simulations of heteroepitaxial Ge growth on the template, containing the buried Ge mound.

AB - Arrays of Ge quantum dot molecules were grown by molecular beam epitaxy using a template, composed of a multilayer structure with layers of vertically aligned three-dimensional (3D) Ge islands buried in an Si crystal matrix with the Si capping layer on top. Depending on preparation conditions, the molecules assume various configurations, including a square frame with [001]-[010]-oriented sides. It was shown by scanning tunneling microscopy that the 3D islands are located closer to the buried SiGe mound centers with the increase of the capping layer thickness. The mechanism of the quantum dot molecule formation is ascribed to strain relaxation. It was confirmed by Monte Carlo simulations of heteroepitaxial Ge growth on the template, containing the buried Ge mound.

UR - http://www.scopus.com/inward/record.url?scp=85123777366&partnerID=8YFLogxK

U2 - 10.1063/5.0075991

DO - 10.1063/5.0075991

M3 - Article

AN - SCOPUS:85123777366

VL - 131

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 035302

ER -

ID: 35379749