TY - JOUR

T1 - Thin films of chlorosubstituted vanadyl phthalocyanine

T2 - charge transport properties and optical spectroscopy study of structure

AU - Basova, Tamara V.

AU - Kiselev, Vitaly G.

AU - Klyamer, Darya D.

AU - Hassan, Aseel

PY - 2018/10/1

Y1 - 2018/10/1

N2 - Electrophysics and structure of thin films of chlorosubstituted vanadyl phthalocyanine (VOPcCl16) were studied using complementary experimental and theoretical techniques. To study charge transport properties of the latter films, organic field-effect transistors were fabricated by physical vapor deposition. The device exhibited good air stability without any extent of degradation after a storage in air for two months. The charge carrier mobility was measured to be (2.0 ± 0.1) × 10−3 cm2 V−1 s−1. This value was rationalized by poor ordering of the VOPcCl16 films revealed with the use of polarization dependent Raman and UV–Vis spectroscopies as well as by X-ray diffraction. Apart from this, we performed a detailed assignment of all intense bands in the vibrational spectra of VOPcCl16. To this end, the experimental IR and Raman data were complemented by quantum chemical calculations at the B3LYP/6-311++G(2df,p) level of theory.

AB - Electrophysics and structure of thin films of chlorosubstituted vanadyl phthalocyanine (VOPcCl16) were studied using complementary experimental and theoretical techniques. To study charge transport properties of the latter films, organic field-effect transistors were fabricated by physical vapor deposition. The device exhibited good air stability without any extent of degradation after a storage in air for two months. The charge carrier mobility was measured to be (2.0 ± 0.1) × 10−3 cm2 V−1 s−1. This value was rationalized by poor ordering of the VOPcCl16 films revealed with the use of polarization dependent Raman and UV–Vis spectroscopies as well as by X-ray diffraction. Apart from this, we performed a detailed assignment of all intense bands in the vibrational spectra of VOPcCl16. To this end, the experimental IR and Raman data were complemented by quantum chemical calculations at the B3LYP/6-311++G(2df,p) level of theory.

KW - FIELD-EFFECT TRANSISTORS

KW - MOLECULAR-ORGANIZATION

KW - ELECTRONIC-STRUCTURE

KW - RAMAN POLARIZATION

KW - MOBILITY

KW - ORIENTATION

KW - CONFIGURATION

KW - POLYMORPHISM

KW - INTERFACES

KW - CRYSTALS

UR - http://www.scopus.com/inward/record.url?scp=85051123613&partnerID=8YFLogxK

U2 - 10.1007/s10854-018-9773-x

DO - 10.1007/s10854-018-9773-x

M3 - Article

AN - SCOPUS:85051123613

VL - 29

SP - 16791

EP - 16798

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 19

ER -