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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing. / Volochaev, M. N.; Tarasov, I. A.; Loginov, Yu Yu и др.

в: Journal of Physics: Conference Series, Том 857, № 1, 012053, 01.06.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование

Harvard

Volochaev, MN, Tarasov, IA, Loginov, YY, Cherkov, AG & Kovalev, IV 2017, 'The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing', Journal of Physics: Conference Series, Том. 857, № 1, 012053. https://doi.org/10.1088/1742-6596/857/1/012053

APA

Volochaev, M. N., Tarasov, I. A., Loginov, Y. Y., Cherkov, A. G., & Kovalev, I. V. (2017). The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing. Journal of Physics: Conference Series, 857(1), [012053]. https://doi.org/10.1088/1742-6596/857/1/012053

Vancouver

Volochaev MN, Tarasov IA, Loginov YY, Cherkov AG, Kovalev IV. The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing. Journal of Physics: Conference Series. 2017 июнь 1;857(1):012053. doi: 10.1088/1742-6596/857/1/012053

Author

Volochaev, M. N. ; Tarasov, I. A. ; Loginov, Yu Yu и др. / The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing. в: Journal of Physics: Conference Series. 2017 ; Том 857, № 1.

BibTeX

@article{16364ec8eaed4d75bbf96fdc64671f46,
title = "The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing",
abstract = "The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.",
keywords = "SPINTRONICS, GROWTH",
author = "Volochaev, {M. N.} and Tarasov, {I. A.} and Loginov, {Yu Yu} and Cherkov, {A. G.} and Kovalev, {I. V.}",
year = "2017",
month = jun,
day = "1",
doi = "10.1088/1742-6596/857/1/012053",
language = "English",
volume = "857",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

AU - Volochaev, M. N.

AU - Tarasov, I. A.

AU - Loginov, Yu Yu

AU - Cherkov, A. G.

AU - Kovalev, I. V.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.

AB - The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.

KW - SPINTRONICS

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85021354814&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/857/1/012053

DO - 10.1088/1742-6596/857/1/012053

M3 - Conference article

AN - SCOPUS:85021354814

VL - 857

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012053

ER -

ID: 12692210