Standard

The initial stages of atomic force microscope based local anodic oxidation of silicon. / Kozhukhov, A. S.; Scheglov, D. V.; Fedina, L. I. и др.

в: AIP Advances, Том 8, № 2, 025113, 01.02.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kozhukhov, AS, Scheglov, DV, Fedina, LI & Latyshev, AV 2018, 'The initial stages of atomic force microscope based local anodic oxidation of silicon', AIP Advances, Том. 8, № 2, 025113. https://doi.org/10.1063/1.5007914

APA

Kozhukhov, A. S., Scheglov, D. V., Fedina, L. I., & Latyshev, A. V. (2018). The initial stages of atomic force microscope based local anodic oxidation of silicon. AIP Advances, 8(2), [025113]. https://doi.org/10.1063/1.5007914

Vancouver

Kozhukhov AS, Scheglov DV, Fedina LI, Latyshev AV. The initial stages of atomic force microscope based local anodic oxidation of silicon. AIP Advances. 2018 февр. 1;8(2):025113. doi: 10.1063/1.5007914

Author

Kozhukhov, A. S. ; Scheglov, D. V. ; Fedina, L. I. и др. / The initial stages of atomic force microscope based local anodic oxidation of silicon. в: AIP Advances. 2018 ; Том 8, № 2.

BibTeX

@article{4a3529a016034516ba77098c547a48ae,
title = "The initial stages of atomic force microscope based local anodic oxidation of silicon",
abstract = "In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (∼100μm) terraces of the atomic-smooth Si (111) surface when creating dense array of local oxidation points. The dependence of LAO points height on the value of voltage initiating the oxidation is found to have a pronounced step-like feature with a characteristic period of 0.7 ± 0.1 nm. The presented analysis shows for the first time the realization of the step-layer mechanism of anodic oxide growth on the Si (111) surface.",
keywords = "SCANNING TUNNELING MICROSCOPE, SURFACE, NANOOXIDATION, FABRICATION, FILMS",
author = "Kozhukhov, {A. S.} and Scheglov, {D. V.} and Fedina, {L. I.} and Latyshev, {A. V.}",
year = "2018",
month = feb,
day = "1",
doi = "10.1063/1.5007914",
language = "English",
volume = "8",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "AMER INST PHYSICS",
number = "2",

}

RIS

TY - JOUR

T1 - The initial stages of atomic force microscope based local anodic oxidation of silicon

AU - Kozhukhov, A. S.

AU - Scheglov, D. V.

AU - Fedina, L. I.

AU - Latyshev, A. V.

PY - 2018/2/1

Y1 - 2018/2/1

N2 - In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (∼100μm) terraces of the atomic-smooth Si (111) surface when creating dense array of local oxidation points. The dependence of LAO points height on the value of voltage initiating the oxidation is found to have a pronounced step-like feature with a characteristic period of 0.7 ± 0.1 nm. The presented analysis shows for the first time the realization of the step-layer mechanism of anodic oxide growth on the Si (111) surface.

AB - In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (∼100μm) terraces of the atomic-smooth Si (111) surface when creating dense array of local oxidation points. The dependence of LAO points height on the value of voltage initiating the oxidation is found to have a pronounced step-like feature with a characteristic period of 0.7 ± 0.1 nm. The presented analysis shows for the first time the realization of the step-layer mechanism of anodic oxide growth on the Si (111) surface.

KW - SCANNING TUNNELING MICROSCOPE

KW - SURFACE

KW - NANOOXIDATION

KW - FABRICATION

KW - FILMS

UR - http://www.scopus.com/inward/record.url?scp=85042075192&partnerID=8YFLogxK

U2 - 10.1063/1.5007914

DO - 10.1063/1.5007914

M3 - Article

AN - SCOPUS:85042075192

VL - 8

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 2

M1 - 025113

ER -

ID: 10420942