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The DA-pHEMT heterostructures for power microwave transistors. / Zhuravlev, K. S.; Protasov, D. Yu; Gulyaev, D. V. и др.
2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8804008 (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Harvard
Zhuravlev, KS, Protasov, DY, Gulyaev, DV, Bakarov, AK, Toropov, AI, Lapin, VG, Lukashin, VM & Pashkovskii, AB 2019,
The DA-pHEMT heterostructures for power microwave transistors. в
2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings., 8804008, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE MTT-S International Wireless Symposium, IWS 2019, Guangzhou, Китай,
19.05.2019.
https://doi.org/10.1109/IEEE-IWS.2019.8804008APA
Zhuravlev, K. S., Protasov, D. Y., Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., Lapin, V. G., Lukashin, V. M., & Pashkovskii, A. B. (2019).
The DA-pHEMT heterostructures for power microwave transistors. в
2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings [8804008] (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc..
https://doi.org/10.1109/IEEE-IWS.2019.8804008Vancouver
Zhuravlev KS, Protasov DY, Gulyaev DV, Bakarov AK, Toropov AI, Lapin VG и др.
The DA-pHEMT heterostructures for power microwave transistors. в 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8804008. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). doi: 10.1109/IEEE-IWS.2019.8804008
Author
Zhuravlev, K. S. ; Protasov, D. Yu ; Gulyaev, D. V. и др. /
The DA-pHEMT heterostructures for power microwave transistors. 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).
BibTeX
@inproceedings{3af09de61aa640989915476d3c345c5c,
title = "The DA-pHEMT heterostructures for power microwave transistors",
abstract = "The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.",
keywords = "2DEG mobility, donor-acceptor doping, output power density, pHEMT, DENSITY, FIELD-EFFECT TRANSISTORS",
author = "Zhuravlev, {K. S.} and Protasov, {D. Yu} and Gulyaev, {D. V.} and Bakarov, {A. K.} and Toropov, {A. I.} and Lapin, {V. G.} and Lukashin, {V. M.} and Pashkovskii, {A. B.}",
year = "2019",
month = may,
day = "1",
doi = "10.1109/IEEE-IWS.2019.8804008",
language = "English",
series = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
address = "United States",
note = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 ; Conference date: 19-05-2019 Through 22-05-2019",
}
RIS
TY - GEN
T1 - The DA-pHEMT heterostructures for power microwave transistors
AU - Zhuravlev, K. S.
AU - Protasov, D. Yu
AU - Gulyaev, D. V.
AU - Bakarov, A. K.
AU - Toropov, A. I.
AU - Lapin, V. G.
AU - Lukashin, V. M.
AU - Pashkovskii, A. B.
PY - 2019/5/1
Y1 - 2019/5/1
N2 - The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.
AB - The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.
KW - 2DEG mobility
KW - donor-acceptor doping
KW - output power density
KW - pHEMT
KW - DENSITY
KW - FIELD-EFFECT TRANSISTORS
UR - http://www.scopus.com/inward/record.url?scp=85071721361&partnerID=8YFLogxK
U2 - 10.1109/IEEE-IWS.2019.8804008
DO - 10.1109/IEEE-IWS.2019.8804008
M3 - Conference contribution
AN - SCOPUS:85071721361
T3 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
BT - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019
Y2 - 19 May 2019 through 22 May 2019
ER -
