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The DA-pHEMT heterostructures for power microwave transistors. / Zhuravlev, K. S.; Protasov, D. Yu; Gulyaev, D. V. и др.

2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8804008 (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаяРецензирование

Harvard

Zhuravlev, KS, Protasov, DY, Gulyaev, DV, Bakarov, AK, Toropov, AI, Lapin, VG, Lukashin, VM & Pashkovskii, AB 2019, The DA-pHEMT heterostructures for power microwave transistors. в 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings., 8804008, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE MTT-S International Wireless Symposium, IWS 2019, Guangzhou, Китай, 19.05.2019. https://doi.org/10.1109/IEEE-IWS.2019.8804008

APA

Zhuravlev, K. S., Protasov, D. Y., Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., Lapin, V. G., Lukashin, V. M., & Pashkovskii, A. B. (2019). The DA-pHEMT heterostructures for power microwave transistors. в 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings [8804008] (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2019.8804008

Vancouver

Zhuravlev KS, Protasov DY, Gulyaev DV, Bakarov AK, Toropov AI, Lapin VG и др. The DA-pHEMT heterostructures for power microwave transistors. в 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8804008. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). doi: 10.1109/IEEE-IWS.2019.8804008

Author

Zhuravlev, K. S. ; Protasov, D. Yu ; Gulyaev, D. V. и др. / The DA-pHEMT heterostructures for power microwave transistors. 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

BibTeX

@inproceedings{3af09de61aa640989915476d3c345c5c,
title = "The DA-pHEMT heterostructures for power microwave transistors",
abstract = "The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.",
keywords = "2DEG mobility, donor-acceptor doping, output power density, pHEMT, DENSITY, FIELD-EFFECT TRANSISTORS",
author = "Zhuravlev, {K. S.} and Protasov, {D. Yu} and Gulyaev, {D. V.} and Bakarov, {A. K.} and Toropov, {A. I.} and Lapin, {V. G.} and Lukashin, {V. M.} and Pashkovskii, {A. B.}",
year = "2019",
month = may,
day = "1",
doi = "10.1109/IEEE-IWS.2019.8804008",
language = "English",
series = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
address = "United States",
note = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 ; Conference date: 19-05-2019 Through 22-05-2019",

}

RIS

TY - GEN

T1 - The DA-pHEMT heterostructures for power microwave transistors

AU - Zhuravlev, K. S.

AU - Protasov, D. Yu

AU - Gulyaev, D. V.

AU - Bakarov, A. K.

AU - Toropov, A. I.

AU - Lapin, V. G.

AU - Lukashin, V. M.

AU - Pashkovskii, A. B.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.

AB - The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.

KW - 2DEG mobility

KW - donor-acceptor doping

KW - output power density

KW - pHEMT

KW - DENSITY

KW - FIELD-EFFECT TRANSISTORS

UR - http://www.scopus.com/inward/record.url?scp=85071721361&partnerID=8YFLogxK

U2 - 10.1109/IEEE-IWS.2019.8804008

DO - 10.1109/IEEE-IWS.2019.8804008

M3 - Conference contribution

AN - SCOPUS:85071721361

T3 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

BT - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019

Y2 - 19 May 2019 through 22 May 2019

ER -

ID: 21468981