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The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films. / Perevalov, Timofey; Prosvirin, Igor P.; Suprun, Evgenii A. и др.

в: Journal of science-Advanced materials and devices, Том 6, № 4, 12.2021, стр. 595-600.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Perevalov, T, Prosvirin, IP, Suprun, EA, Mehmood, F, Mikolajick, T, Schroeder, U & Gritsenko, VA 2021, 'The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films', Journal of science-Advanced materials and devices, Том. 6, № 4, стр. 595-600. https://doi.org/10.1016/j.jsamd.2021.08.001

APA

Perevalov, T., Prosvirin, I. P., Suprun, E. A., Mehmood, F., Mikolajick, T., Schroeder, U., & Gritsenko, V. A. (2021). The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films. Journal of science-Advanced materials and devices, 6(4), 595-600. https://doi.org/10.1016/j.jsamd.2021.08.001

Vancouver

Perevalov T, Prosvirin IP, Suprun EA, Mehmood F, Mikolajick T, Schroeder U и др. The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films. Journal of science-Advanced materials and devices. 2021 дек.;6(4):595-600. doi: 10.1016/j.jsamd.2021.08.001

Author

Perevalov, Timofey ; Prosvirin, Igor P. ; Suprun, Evgenii A. и др. / The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films. в: Journal of science-Advanced materials and devices. 2021 ; Том 6, № 4. стр. 595-600.

BibTeX

@article{d2ec07e69f2845099e7d62118f39d960,
title = "The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films",
abstract = "HfxZr1-xO2 and lanthanum-doped HfxZr1-xO2:La thin films are candidates for applications in ferroelectric random-access memory. Here, we explore the atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La thin films grown by atomic layer deposition. Using X-ray photoelectron spectroscopy, it was found that the oxides under study have an almost identical electronic structure and a bandgap of about 5.4 eV. The Hf0.5Zr0.5O2:La film was shown to consist of the mixture of Hf0.5Zr0.5O2 and La2O3 phases. The bombardment with argon ions of the studied films leads to oxygen vacancy generation in the near-surface layer. The oxygen vacancy concentrations in the bombarded films were evaluated from the comparison of experimental valence band photoelectron spectra with the theoretical ones calculated using the density functional theory.",
keywords = "FeRAM, XPS, Oxygen vacancy, Electronic structure, HfZrO, THIN-FILMS, OXYGEN VACANCIES, OXIDE",
author = "Timofey Perevalov and Prosvirin, {Igor P.} and Suprun, {Evgenii A.} and Furqan Mehmood and Thomas Mikolajick and Uwe Schroeder and Gritsenko, {Vladimir A.}",
note = "Funding Information: This work was supported by the Russian Foundation for Basic Research , Grant № 20-57-12003 (XPS measurements) and under the state contract with ISP SB RAS № 0242-2021-0003 (DFT simulation), as well as by DFG Project No 430054035 (MI 1247/16-1). Publisher Copyright: {\textcopyright} 2021 The Authors",
year = "2021",
month = dec,
doi = "10.1016/j.jsamd.2021.08.001",
language = "English",
volume = "6",
pages = "595--600",
journal = "Journal of science-Advanced materials and devices",
issn = "2468-2284",
publisher = "Elsevier Science B.V.",
number = "4",

}

RIS

TY - JOUR

T1 - The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films

AU - Perevalov, Timofey

AU - Prosvirin, Igor P.

AU - Suprun, Evgenii A.

AU - Mehmood, Furqan

AU - Mikolajick, Thomas

AU - Schroeder, Uwe

AU - Gritsenko, Vladimir A.

N1 - Funding Information: This work was supported by the Russian Foundation for Basic Research , Grant № 20-57-12003 (XPS measurements) and under the state contract with ISP SB RAS № 0242-2021-0003 (DFT simulation), as well as by DFG Project No 430054035 (MI 1247/16-1). Publisher Copyright: © 2021 The Authors

PY - 2021/12

Y1 - 2021/12

N2 - HfxZr1-xO2 and lanthanum-doped HfxZr1-xO2:La thin films are candidates for applications in ferroelectric random-access memory. Here, we explore the atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La thin films grown by atomic layer deposition. Using X-ray photoelectron spectroscopy, it was found that the oxides under study have an almost identical electronic structure and a bandgap of about 5.4 eV. The Hf0.5Zr0.5O2:La film was shown to consist of the mixture of Hf0.5Zr0.5O2 and La2O3 phases. The bombardment with argon ions of the studied films leads to oxygen vacancy generation in the near-surface layer. The oxygen vacancy concentrations in the bombarded films were evaluated from the comparison of experimental valence band photoelectron spectra with the theoretical ones calculated using the density functional theory.

AB - HfxZr1-xO2 and lanthanum-doped HfxZr1-xO2:La thin films are candidates for applications in ferroelectric random-access memory. Here, we explore the atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La thin films grown by atomic layer deposition. Using X-ray photoelectron spectroscopy, it was found that the oxides under study have an almost identical electronic structure and a bandgap of about 5.4 eV. The Hf0.5Zr0.5O2:La film was shown to consist of the mixture of Hf0.5Zr0.5O2 and La2O3 phases. The bombardment with argon ions of the studied films leads to oxygen vacancy generation in the near-surface layer. The oxygen vacancy concentrations in the bombarded films were evaluated from the comparison of experimental valence band photoelectron spectra with the theoretical ones calculated using the density functional theory.

KW - FeRAM

KW - XPS

KW - Oxygen vacancy

KW - Electronic structure

KW - HfZrO

KW - THIN-FILMS

KW - OXYGEN VACANCIES

KW - OXIDE

UR - http://www.scopus.com/inward/record.url?scp=85122726054&partnerID=8YFLogxK

U2 - 10.1016/j.jsamd.2021.08.001

DO - 10.1016/j.jsamd.2021.08.001

M3 - Article

VL - 6

SP - 595

EP - 600

JO - Journal of science-Advanced materials and devices

JF - Journal of science-Advanced materials and devices

SN - 2468-2284

IS - 4

ER -

ID: 34678497