TY - CHAP

T1 - Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

AU - Shklyaev, A. A.

AU - Romanyuk, K. N.

AU - Kosolobov, S. S.

AU - Latyshev, Alexander V.

N1 - Publisher Copyright: © 2017 Elsevier Inc. All rights reserved.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The surface morphology of Ge layers grown over a wide temperature range by Ge deposition on Si(001) and Si(111) surfaces, either bare or covered with ultrathin SiO2 films, is studied with scanning tunneling and electron microscopy. Since the SiO2 film is partly decomposed at temperatures above 430°C, this produces the appearance of bare Si nanoareas which serve for epitaxial Ge island nucleation and growth with respect to the Si substrate. It is essential that the SiO2 film residuals prevent Ge-Si intermixing, allowing pure Ge islands to form. The shapes of such islands are also different from the islands grown on bare surfaces, which contain a significant amount of Si due to strain-induced Si-Ge intermixing. The growth of islands at high temperatures reveals that Si-Ge intermixing cardinally affects not only the island's chemical composition, but also their shape and distribution over the surface, providing islands ordering on Si(100) or nanowire formation on Si(111). These new surface morphologies may lead to Si-Ge nanostructure fabrication with modified optoelectronic characteristics.

AB - The surface morphology of Ge layers grown over a wide temperature range by Ge deposition on Si(001) and Si(111) surfaces, either bare or covered with ultrathin SiO2 films, is studied with scanning tunneling and electron microscopy. Since the SiO2 film is partly decomposed at temperatures above 430°C, this produces the appearance of bare Si nanoareas which serve for epitaxial Ge island nucleation and growth with respect to the Si substrate. It is essential that the SiO2 film residuals prevent Ge-Si intermixing, allowing pure Ge islands to form. The shapes of such islands are also different from the islands grown on bare surfaces, which contain a significant amount of Si due to strain-induced Si-Ge intermixing. The growth of islands at high temperatures reveals that Si-Ge intermixing cardinally affects not only the island's chemical composition, but also their shape and distribution over the surface, providing islands ordering on Si(100) or nanowire formation on Si(111). These new surface morphologies may lead to Si-Ge nanostructure fabrication with modified optoelectronic characteristics.

KW - Ge epitaxy on Si

KW - High-temperature SiGe surface morphologies

KW - Nanocontact epitaxy

KW - Scanning tunneling microscopy

KW - ISLANDS

KW - NANOSTRUCTURES

KW - SI(111)

KW - SI(001)

KW - SI SURFACES

KW - STRANSKI-KRASTANOV GROWTH

KW - QUANTUM DOTS

KW - GERMANIUM

KW - SHAPE TRANSITION

KW - SCANNING-TUNNELING-MICROSCOPY

KW - High-temperature Si Ge surface morphologies

UR - http://www.scopus.com/inward/record.url?scp=85022212896&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00013-5

DO - 10.1016/B978-0-12-810512-2.00013-5

M3 - Chapter

SN - 9780128105122

SP - 325

EP - 344

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -