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Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films. / Stepina, N. P.; Golyashov, V. A.; Bazhenov, A. O. и др.

в: Applied Physics Letters, Том 126, № 22, 223102, 2025.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Stepina, NP, Golyashov, VA, Bazhenov, AO, Ishchenko, DV, Kumar, N, Shumilin, AV & Tereshchenko, OE 2025, 'Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films', Applied Physics Letters, Том. 126, № 22, 223102. https://doi.org/10.1063/5.0260935

APA

Stepina, N. P., Golyashov, V. A., Bazhenov, A. O., Ishchenko, D. V., Kumar, N., Shumilin, A. V., & Tereshchenko, O. E. (2025). Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films. Applied Physics Letters, 126(22), [223102]. https://doi.org/10.1063/5.0260935

Vancouver

Stepina NP, Golyashov VA, Bazhenov AO, Ishchenko DV, Kumar N, Shumilin AV и др. Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films. Applied Physics Letters. 2025;126(22):223102. doi: 10.1063/5.0260935

Author

Stepina, N. P. ; Golyashov, V. A. ; Bazhenov, A. O. и др. / Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films. в: Applied Physics Letters. 2025 ; Том 126, № 22.

BibTeX

@article{c036778e171a4a87bb994f43ab51a6f1,
title = "Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films",
abstract = "The effects of chemical treatment and aging of BiySb2−yTe3−xSex 3D topological insulator (TI) thin films on the surface electronic structure, morphology, and transport properties have been studied. The surface conditions significantly affect the separation between the Dirac point (DP) and the Fermi level, which is evident in both photoemission and magnetotransport measurements and is explained by the band bending. Depending on the Fermi level's position relative to the DP, the contribution of topological surface states to the nonlinear Hall effect can be solely controlled by the antilocalization effect or enhanced by the effect of gap opening. The wide tuning of the surface Fermi level by the surface/interface modification could be utilized in metal-insulator-semiconductor structures based on a TI thin films.",
author = "Stepina, {N. P.} and Golyashov, {V. A.} and Bazhenov, {A. O.} and Ishchenko, {D. V.} and N. Kumar and Shumilin, {A. V.} and Tereshchenko, {O. E.}",
note = "This work was supported by the Russian Science Foundation (Grant No. 24-22-20066) and Government of the Novosibirsk region. The authors are grateful to V. V. Kirienko for help with the contact fabrication.",
year = "2025",
doi = "10.1063/5.0260935",
language = "English",
volume = "126",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "22",

}

RIS

TY - JOUR

T1 - Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films

AU - Stepina, N. P.

AU - Golyashov, V. A.

AU - Bazhenov, A. O.

AU - Ishchenko, D. V.

AU - Kumar, N.

AU - Shumilin, A. V.

AU - Tereshchenko, O. E.

N1 - This work was supported by the Russian Science Foundation (Grant No. 24-22-20066) and Government of the Novosibirsk region. The authors are grateful to V. V. Kirienko for help with the contact fabrication.

PY - 2025

Y1 - 2025

N2 - The effects of chemical treatment and aging of BiySb2−yTe3−xSex 3D topological insulator (TI) thin films on the surface electronic structure, morphology, and transport properties have been studied. The surface conditions significantly affect the separation between the Dirac point (DP) and the Fermi level, which is evident in both photoemission and magnetotransport measurements and is explained by the band bending. Depending on the Fermi level's position relative to the DP, the contribution of topological surface states to the nonlinear Hall effect can be solely controlled by the antilocalization effect or enhanced by the effect of gap opening. The wide tuning of the surface Fermi level by the surface/interface modification could be utilized in metal-insulator-semiconductor structures based on a TI thin films.

AB - The effects of chemical treatment and aging of BiySb2−yTe3−xSex 3D topological insulator (TI) thin films on the surface electronic structure, morphology, and transport properties have been studied. The surface conditions significantly affect the separation between the Dirac point (DP) and the Fermi level, which is evident in both photoemission and magnetotransport measurements and is explained by the band bending. Depending on the Fermi level's position relative to the DP, the contribution of topological surface states to the nonlinear Hall effect can be solely controlled by the antilocalization effect or enhanced by the effect of gap opening. The wide tuning of the surface Fermi level by the surface/interface modification could be utilized in metal-insulator-semiconductor structures based on a TI thin films.

UR - https://www.mendeley.com/catalogue/69ce78d0-84e2-35d4-ba7c-91c6fe3d9ef0/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-105007513502&origin=inward&txGid=4aee8ba64bb2085e1029643953cb8333

U2 - 10.1063/5.0260935

DO - 10.1063/5.0260935

M3 - Article

VL - 126

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 223102

ER -

ID: 67902698