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Structure and magneto-electric properties of Co-based ferromagnetic films grown on the Pb0.71Sn0.29Te crystalline topological insulator. / Kaveev, Andrey K.; Golyashov, Vladimir A.; Klimov, Alexander E. и др.

в: Materials Chemistry and Physics, Том 240, 122134, 15.01.2020.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Kaveev AK, Golyashov VA, Klimov AE, Schwier EF, Suturin SM, Tarasov AS и др. Structure and magneto-electric properties of Co-based ferromagnetic films grown on the Pb0.71Sn0.29Te crystalline topological insulator. Materials Chemistry and Physics. 2020 янв. 15;240:122134. doi: 10.1016/j.matchemphys.2019.122134

Author

Kaveev, Andrey K. ; Golyashov, Vladimir A. ; Klimov, Alexander E. и др. / Structure and magneto-electric properties of Co-based ferromagnetic films grown on the Pb0.71Sn0.29Te crystalline topological insulator. в: Materials Chemistry and Physics. 2020 ; Том 240.

BibTeX

@article{1e5db35d792643b1a6be33a931e11499,
title = "Structure and magneto-electric properties of Co-based ferromagnetic films grown on the Pb0.71Sn0.29Te crystalline topological insulator",
abstract = "Co, Ni, Co55Fe45 and Co40Fe40B20 layers were grown on Pb0.71Sn0.29Te (111) crystalline topological insulator films by conventional and laser molecular beam epitaxy (LMBE) methods. It was demonstrated that the Co40Fe40B20 ferromagnetic films were grown epitaxially on the crystalline topological insulator surface, with clear epitaxial relations. Obtained Co40Fe40B20 layers have a bcc crystal structure with a crystalline (111) plane parallel to the (111) plane of Pb0.71Sn0.29Te. The use of reciprocal space three-dimensional mapping of reflection high electron diffraction (RHEED) patterns made it possible to determine the epitaxial relations of the film and substrate. Using laser based angle-resolved photoemission spectroscopy (LARPES) the clean Pb0.71Sn0.29Te surface with Dirac-like dispersion of the topological surface states was demonstrated. The stable surface topological state of Pb0.71Sn0.29Te was observed at least at the monolayer thick Co coverage. It was shown that Co (or Ni) and Co55Fe45 may be used as a pair of contacts (injector and detector) with different coercivities for spin transport measurements in the “metal – topological insulator” systems. The measurements of magnetic and transport properties show distinct hysteresis – type dependence of the magnetoresistance in the range of quadratic I(U) dependence.",
keywords = "Epitaxial relations, Ferromagnetic metal, Magnetoresistance, Topological insulator, DIFFRACTION",
author = "Kaveev, {Andrey K.} and Golyashov, {Vladimir A.} and Klimov, {Alexander E.} and Schwier, {Eike F.} and Suturin, {Sergey M.} and Tarasov, {Andrey S.} and Tereshchenko, {Oleg E.}",
note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",
year = "2020",
month = jan,
day = "15",
doi = "10.1016/j.matchemphys.2019.122134",
language = "English",
volume = "240",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Structure and magneto-electric properties of Co-based ferromagnetic films grown on the Pb0.71Sn0.29Te crystalline topological insulator

AU - Kaveev, Andrey K.

AU - Golyashov, Vladimir A.

AU - Klimov, Alexander E.

AU - Schwier, Eike F.

AU - Suturin, Sergey M.

AU - Tarasov, Andrey S.

AU - Tereshchenko, Oleg E.

N1 - Publisher Copyright: © 2019 Elsevier B.V.

PY - 2020/1/15

Y1 - 2020/1/15

N2 - Co, Ni, Co55Fe45 and Co40Fe40B20 layers were grown on Pb0.71Sn0.29Te (111) crystalline topological insulator films by conventional and laser molecular beam epitaxy (LMBE) methods. It was demonstrated that the Co40Fe40B20 ferromagnetic films were grown epitaxially on the crystalline topological insulator surface, with clear epitaxial relations. Obtained Co40Fe40B20 layers have a bcc crystal structure with a crystalline (111) plane parallel to the (111) plane of Pb0.71Sn0.29Te. The use of reciprocal space three-dimensional mapping of reflection high electron diffraction (RHEED) patterns made it possible to determine the epitaxial relations of the film and substrate. Using laser based angle-resolved photoemission spectroscopy (LARPES) the clean Pb0.71Sn0.29Te surface with Dirac-like dispersion of the topological surface states was demonstrated. The stable surface topological state of Pb0.71Sn0.29Te was observed at least at the monolayer thick Co coverage. It was shown that Co (or Ni) and Co55Fe45 may be used as a pair of contacts (injector and detector) with different coercivities for spin transport measurements in the “metal – topological insulator” systems. The measurements of magnetic and transport properties show distinct hysteresis – type dependence of the magnetoresistance in the range of quadratic I(U) dependence.

AB - Co, Ni, Co55Fe45 and Co40Fe40B20 layers were grown on Pb0.71Sn0.29Te (111) crystalline topological insulator films by conventional and laser molecular beam epitaxy (LMBE) methods. It was demonstrated that the Co40Fe40B20 ferromagnetic films were grown epitaxially on the crystalline topological insulator surface, with clear epitaxial relations. Obtained Co40Fe40B20 layers have a bcc crystal structure with a crystalline (111) plane parallel to the (111) plane of Pb0.71Sn0.29Te. The use of reciprocal space three-dimensional mapping of reflection high electron diffraction (RHEED) patterns made it possible to determine the epitaxial relations of the film and substrate. Using laser based angle-resolved photoemission spectroscopy (LARPES) the clean Pb0.71Sn0.29Te surface with Dirac-like dispersion of the topological surface states was demonstrated. The stable surface topological state of Pb0.71Sn0.29Te was observed at least at the monolayer thick Co coverage. It was shown that Co (or Ni) and Co55Fe45 may be used as a pair of contacts (injector and detector) with different coercivities for spin transport measurements in the “metal – topological insulator” systems. The measurements of magnetic and transport properties show distinct hysteresis – type dependence of the magnetoresistance in the range of quadratic I(U) dependence.

KW - Epitaxial relations

KW - Ferromagnetic metal

KW - Magnetoresistance

KW - Topological insulator

KW - DIFFRACTION

UR - http://www.scopus.com/inward/record.url?scp=85072581057&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2019.122134

DO - 10.1016/j.matchemphys.2019.122134

M3 - Article

AN - SCOPUS:85072581057

VL - 240

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

M1 - 122134

ER -

ID: 21679457