TY - GEN

T1 - Structural Transformation of Bi2Se3(001) Surface during Sn Monolayer Annealing

AU - Zakhozhev, Konstantin

AU - Ponomarev, Sergei

AU - Golyashov, Vladimir

AU - Nasimov, Dmitry

AU - Kokh, Konstantin

AU - Rogilo, Dmitry

N1 - Conference code: 26

PY - 2025/8/8

Y1 - 2025/8/8

N2 - Using in situ X-ray photoelectron spectroscopy under ultra-high vacuum conditions, the adsorption of a thin tin layer (1 monolayer ≈ 0.2 nm) on the Bi2Se3(0001) surface at room temperature followed by annealing at 210°C was investigated. Changes in the X-ray photoelectron spectra of Bi2Se3 and Sn0 revealed the formation of crystalline bismuth and Sn-Se compounds indicating the substitution of bismuth atoms by tin, subsequent exit to the surface, and the formation of Bi(111) bilayers during annealing. Scanning electron microscopy in backscattered and secondary electron detection modes has visualized a labyrinth-like structure where regions with an enhanced tin concentration occupy approximately 50% of the sample area, which suggests the formation of SnSe2 and SnSe compounds in the near-surface region. Atomic force microscopy images of the Bi2Se3(0001) surface morphology after the deposition and annealing of 1 monolayer of tin show height variations corresponding to SnSe2 and SnSe van der Waals molecular layers and the Bi(111) bilayers.

AB - Using in situ X-ray photoelectron spectroscopy under ultra-high vacuum conditions, the adsorption of a thin tin layer (1 monolayer ≈ 0.2 nm) on the Bi2Se3(0001) surface at room temperature followed by annealing at 210°C was investigated. Changes in the X-ray photoelectron spectra of Bi2Se3 and Sn0 revealed the formation of crystalline bismuth and Sn-Se compounds indicating the substitution of bismuth atoms by tin, subsequent exit to the surface, and the formation of Bi(111) bilayers during annealing. Scanning electron microscopy in backscattered and secondary electron detection modes has visualized a labyrinth-like structure where regions with an enhanced tin concentration occupy approximately 50% of the sample area, which suggests the formation of SnSe2 and SnSe compounds in the near-surface region. Atomic force microscopy images of the Bi2Se3(0001) surface morphology after the deposition and annealing of 1 monolayer of tin show height variations corresponding to SnSe2 and SnSe van der Waals molecular layers and the Bi(111) bilayers.

KW - Bi(111)

KW - Bi2Se3

KW - SnSe2

KW - adsorption

KW - tin

UR - https://www.scopus.com/pages/publications/105014155820

UR - https://www.mendeley.com/catalogue/785d5614-3c9e-35f8-bd32-719d9d0e2d09/

U2 - 10.1109/EDM65517.2025.11096641

DO - 10.1109/EDM65517.2025.11096641

M3 - Conference contribution

SN - 9781665477376

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 80

EP - 83

BT - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

PB - IEEE Computer Society

T2 - 2025 IEEE 26th International Conference of Young Professionals in Electron Devices and Materials (EDM)

Y2 - 27 June 2025 through 1 July 2025

ER -