TY - JOUR

T1 - Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

AU - Abramkin, Demid S

AU - Petrushkov, Mikhail O

AU - Bogomolov, Dmitrii B

AU - Emelyanov, Eugeny A

AU - Yesin, Mikhail Yu

AU - Vasev, Andrey V

AU - Bloshkin, Alexey A

AU - Koptev, Eugeny S

AU - Putyato, Mikhail A

AU - Atuchin, Victor V

AU - Preobrazhenskii, Valery V

N1 - Funding: This work was supported by the Russian Science Foundation, grant 22-22-20031 https://rscf.ru/project/22-22-20031/ (21 March 2022), and by the Novosibirsk Regional Government, grant r-14 (6 April 2022).

PY - 2023/2/28

Y1 - 2023/2/28

N2 - In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were determined. An almost complete plastic relaxation of the elastic strain in SAQDs was reached. The strain relaxation in the SAQDs on the GaP/Si substrates does not lead to a reduction in the SAQDs luminescence efficiency, while the introduction of dislocations into SAQDs on the GaP substrates induced a strong quenching of SAQDs luminescence. Probably, this difference is caused by the introduction of Lomer 90°-dislocations without uncompensated atomic bonds in GaP/Si-based SAQDs, while threading 60°-dislocations are introduced into GaP-based SAQDs. It was shown that GaP/Si-based SAQDs have an energy spectrum of type II with an indirect bandgap and the ground electronic state belonging to the X-valley of the AlP conduction band. The hole localization energy in these SAQDs was estimated equal to 1.65-1.70 eV. This fact allows us to predict the charge storage time in the SAQDs to be as long as >>10 years, and it makes GaSb/AlP SAQDs promising objects for creating universal memory cells.

AB - In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were determined. An almost complete plastic relaxation of the elastic strain in SAQDs was reached. The strain relaxation in the SAQDs on the GaP/Si substrates does not lead to a reduction in the SAQDs luminescence efficiency, while the introduction of dislocations into SAQDs on the GaP substrates induced a strong quenching of SAQDs luminescence. Probably, this difference is caused by the introduction of Lomer 90°-dislocations without uncompensated atomic bonds in GaP/Si-based SAQDs, while threading 60°-dislocations are introduced into GaP-based SAQDs. It was shown that GaP/Si-based SAQDs have an energy spectrum of type II with an indirect bandgap and the ground electronic state belonging to the X-valley of the AlP conduction band. The hole localization energy in these SAQDs was estimated equal to 1.65-1.70 eV. This fact allows us to predict the charge storage time in the SAQDs to be as long as >>10 years, and it makes GaSb/AlP SAQDs promising objects for creating universal memory cells.

KW - GaSb/AlP

KW - QD-Flash

KW - energy spectrum

KW - molecular beam epitaxy

KW - quantum dots

KW - structural properties

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85149770623&origin=inward&txGid=4c9b040dfd921dec50b9364e3c9ee571

UR - https://elibrary.ru/item.asp?id=50437191

UR - https://www.mendeley.com/catalogue/da1093b5-87fc-3d8b-adae-8ef28f975237/

U2 - 10.3390/nano13050910

DO - 10.3390/nano13050910

M3 - Article

C2 - 36903788

VL - 13

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 5

M1 - 910

ER -