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Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S. / Khatchenko, Yu E.; Yakushev, M. V.; Seibel, C. и др.

в: Journal of Alloys and Compounds, Том 890, 161824, 15.01.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Khatchenko, YE, Yakushev, MV, Seibel, C, Bentmann, H, Orlita, M, Golyashov, V, Ponosov, YS, Stepina, NP, Mudriy, AV, Kokh, KA, Tereshchenko, OE, Reinert, F, Martin, RW & Kuznetsova, TV 2022, 'Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S', Journal of Alloys and Compounds, Том. 890, 161824. https://doi.org/10.1016/j.jallcom.2021.161824

APA

Khatchenko, Y. E., Yakushev, M. V., Seibel, C., Bentmann, H., Orlita, M., Golyashov, V., Ponosov, Y. S., Stepina, N. P., Mudriy, A. V., Kokh, K. A., Tereshchenko, O. E., Reinert, F., Martin, R. W., & Kuznetsova, T. V. (2022). Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S. Journal of Alloys and Compounds, 890, [161824]. https://doi.org/10.1016/j.jallcom.2021.161824

Vancouver

Khatchenko YE, Yakushev MV, Seibel C, Bentmann H, Orlita M, Golyashov V и др. Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S. Journal of Alloys and Compounds. 2022 янв. 15;890:161824. doi: 10.1016/j.jallcom.2021.161824

Author

Khatchenko, Yu E. ; Yakushev, M. V. ; Seibel, C. и др. / Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S. в: Journal of Alloys and Compounds. 2022 ; Том 890.

BibTeX

@article{e6de8e89513e45749f98487fc2fd5e73,
title = "Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S",
abstract = "Successful applications of a topological insulator (TI) in spintronics require its bandgap to be wider then in a typical TI and the energy position of the Dirac point in the dispersion relations to be away from the valence and conduction bands. In this study we grew Bi1.1Sb0.9Te2S crystals and examined their elemental composition, structural, optical and electronic properties as well as the electronic band structure. The high structural quality of the grown crystals was established by X-ray diffraction and Raman spectroscopy. Angular resolved photoelectron spectroscopy demonstrated a near parabolic character of the valence and conduction bands and a direct bandgap of 0.36 eV. The dispersion relations also revealed a Dirac cone, confirming the topological insulator nature of this material, with the position of the Dirac point being 100 meV above the valence band maximum. Far infrared reflectivity spectra revealed a plasma edge and two phonon dips. Fitting these spectra with theoretical functions based on the Drude-Lorentz model allows determination of the high frequency dielectric constant (41.3), plasma frequency (936 cm−1) and the frequencies of two infrared phonons (177.7 cm−1 and 77.4 cm−1).",
keywords = "ARPES, BiSbTeS, Electronic structure, Far infrared, Optical reflectivity, Topological insulator",
author = "Khatchenko, {Yu E.} and Yakushev, {M. V.} and C. Seibel and H. Bentmann and M. Orlita and V. Golyashov and Ponosov, {Y. S.} and Stepina, {N. P.} and Mudriy, {A. V.} and Kokh, {K. A.} and Tereshchenko, {O. E.} and F. Reinert and Martin, {R. W.} and Kuznetsova, {T. V.}",
note = "Funding Information: The reported study was funded by RFBR , project number 19-29-12061 . The part of optical research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme {"}Spin{"} No AAAA-A18-118020290104-2 and No AAAA-A19-119081990020-8 and theme {"}Electron{"} No AAAAA18-118020190098-5 ). The study was also supported by the Russian Science Foundation (Project No. 17-12-01047 ) in the part of the crystal growth and state assignment of ISP SB RAS ( 0306–2019-0007 ) and IGM SB RAS. The Raman measurements were partially supported by the grant of the Russian Foundation for Basic Research (Project No. 19-52-18008 ). This work is funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through project-ID 258499086 – SFB 1170 (A01) , the W{\"u}rzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter–ct.qmat Project-ID 390858490 – EXC 2147 . Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",
year = "2022",
month = jan,
day = "15",
doi = "10.1016/j.jallcom.2021.161824",
language = "English",
volume = "890",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S

AU - Khatchenko, Yu E.

AU - Yakushev, M. V.

AU - Seibel, C.

AU - Bentmann, H.

AU - Orlita, M.

AU - Golyashov, V.

AU - Ponosov, Y. S.

AU - Stepina, N. P.

AU - Mudriy, A. V.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Reinert, F.

AU - Martin, R. W.

AU - Kuznetsova, T. V.

N1 - Funding Information: The reported study was funded by RFBR , project number 19-29-12061 . The part of optical research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme "Spin" No AAAA-A18-118020290104-2 and No AAAA-A19-119081990020-8 and theme "Electron" No AAAAA18-118020190098-5 ). The study was also supported by the Russian Science Foundation (Project No. 17-12-01047 ) in the part of the crystal growth and state assignment of ISP SB RAS ( 0306–2019-0007 ) and IGM SB RAS. The Raman measurements were partially supported by the grant of the Russian Foundation for Basic Research (Project No. 19-52-18008 ). This work is funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through project-ID 258499086 – SFB 1170 (A01) , the Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter–ct.qmat Project-ID 390858490 – EXC 2147 . Publisher Copyright: © 2021 Elsevier B.V.

PY - 2022/1/15

Y1 - 2022/1/15

N2 - Successful applications of a topological insulator (TI) in spintronics require its bandgap to be wider then in a typical TI and the energy position of the Dirac point in the dispersion relations to be away from the valence and conduction bands. In this study we grew Bi1.1Sb0.9Te2S crystals and examined their elemental composition, structural, optical and electronic properties as well as the electronic band structure. The high structural quality of the grown crystals was established by X-ray diffraction and Raman spectroscopy. Angular resolved photoelectron spectroscopy demonstrated a near parabolic character of the valence and conduction bands and a direct bandgap of 0.36 eV. The dispersion relations also revealed a Dirac cone, confirming the topological insulator nature of this material, with the position of the Dirac point being 100 meV above the valence band maximum. Far infrared reflectivity spectra revealed a plasma edge and two phonon dips. Fitting these spectra with theoretical functions based on the Drude-Lorentz model allows determination of the high frequency dielectric constant (41.3), plasma frequency (936 cm−1) and the frequencies of two infrared phonons (177.7 cm−1 and 77.4 cm−1).

AB - Successful applications of a topological insulator (TI) in spintronics require its bandgap to be wider then in a typical TI and the energy position of the Dirac point in the dispersion relations to be away from the valence and conduction bands. In this study we grew Bi1.1Sb0.9Te2S crystals and examined their elemental composition, structural, optical and electronic properties as well as the electronic band structure. The high structural quality of the grown crystals was established by X-ray diffraction and Raman spectroscopy. Angular resolved photoelectron spectroscopy demonstrated a near parabolic character of the valence and conduction bands and a direct bandgap of 0.36 eV. The dispersion relations also revealed a Dirac cone, confirming the topological insulator nature of this material, with the position of the Dirac point being 100 meV above the valence band maximum. Far infrared reflectivity spectra revealed a plasma edge and two phonon dips. Fitting these spectra with theoretical functions based on the Drude-Lorentz model allows determination of the high frequency dielectric constant (41.3), plasma frequency (936 cm−1) and the frequencies of two infrared phonons (177.7 cm−1 and 77.4 cm−1).

KW - ARPES

KW - BiSbTeS

KW - Electronic structure

KW - Far infrared

KW - Optical reflectivity

KW - Topological insulator

UR - http://www.scopus.com/inward/record.url?scp=85114427301&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=47044312

U2 - 10.1016/j.jallcom.2021.161824

DO - 10.1016/j.jallcom.2021.161824

M3 - Article

AN - SCOPUS:85114427301

VL - 890

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

M1 - 161824

ER -

ID: 34161267